Issued Patents All Time
Showing 1–25 of 41 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12356865 | Multilayer structure for reducing film roughness in magnetic devices | Jian Zhu, Guenole Jan, Yuan-Jen Lee, Huanlong Liu, Ru-Ying Tong +4 more | 2025-07-08 |
| 12310245 | Etching and encapsulation scheme for magnetic tunnel junction fabrication | Yi Yang, Dongna Shen, Zhongjian Teng, Jesmin Haq, Sahil Patel +2 more | 2025-05-20 |
| 12245516 | Self-aligned encapsulation hard mask to separate physically under-etched MTJ cells to reduce conductive re-deposition | Yi Yang, Dongna Shen, Yu-Jen Wang | 2025-03-04 |
| 12207566 | MTJ device performance by adding stress modulation layer to MTJ device structure | Jesmin Haq, Tom Zhong, Vinh Lam, Zhongjian Teng | 2025-01-21 |
| 12185641 | Silicon oxynitride based encapsulation layer for magnetic tunnel junctions | Yu-Jen Wang, Dongna Shen, Sahil Patel, Ru-Ying Tong | 2024-12-31 |
| 12082509 | Dual magnetic tunnel junction (DMTJ) stack design | Yu-Jen Wang, Luc Thomas, Guenole Jan, Sahil Patel, Ru-Ying Tong | 2024-09-03 |
| 12027191 | Free layer structure in magnetic random access memory (MRAM) for Mo or W perpendicular magnetic anisotropy (PMA) enhancing layer | Hideaki Fukuzawa, Yu-Jen Wang, Ru-Ying Tong | 2024-07-02 |
| 11956971 | Cooling for PMA (perpendicular magnetic anisotropy) enhancement of STT-MRAM (spin-torque transfer-magnetic random access memory) devices | Huanlong Liu, Guenole Jan, Ru-Ying Tong, Jian Zhu, Yuan-Jen Lee +2 more | 2024-04-09 |
| 11903324 | Post treatment to reduce shunting devices for physical etching process | Yu-Jen Wang, Dongna Shen, Sahil Patel | 2024-02-13 |
| 11849646 | Nitride capping layer for spin torque transfer (STT) magnetoresistive random access memory (MRAM) | Jodi Mari Iwata, Guenole Jan, Ru-Ying Tong, Jian Zhu, Huanlong Liu | 2023-12-19 |
| 11818961 | Self-aligned encapsulation hard mask to separate physically under-etched MTJ cells to reduce conductive re-deposition | Yi Yang, Dongna Shen, Yu-Jen Wang | 2023-11-14 |
| 11785864 | MTJ device performance by adding stress modulation layer to mtj device structure | Jesmin Haq, Tom Zhong, Vinh Lam, Zhongjian Teng | 2023-10-10 |
| 11696511 | Low resistance MgO capping layer for perpendicularly magnetized magnetic tunnel junctions | Sahil Patel, Guenole Jan, Ru-Ying Tong, Dongna Shen, Yu-Jen Wang +2 more | 2023-07-04 |
| 11631802 | Etching and encapsulation scheme for magnetic tunnel junction fabrication | Yi Yang, Dongna Shen, Zhongjian Teng, Jesmin Haq, Sahil Patel +2 more | 2023-04-18 |
| 11495738 | Dual magnetic tunnel junction devices for magnetic random access memory (MRAM) | Yu-Jen Wang, Luc Thomas, Guenole Jan | 2022-11-08 |
| 11444241 | Self-aligned encapsulation hard mask to separate physically under-etched MTJ cells to reduce conductive R-deposition | Yi Yang, Dongna Shen, Yu-Jen Wang | 2022-09-13 |
| 11430945 | MTJ device performance by adding stress modulation layer to MTJ device structure | Jesmin Haq, Tom Zhong, Vinh Lam, Zhongjian Teng | 2022-08-30 |
| 11424405 | Post treatment to reduce shunting devices for physical etching process | Yu-Jen Wang, Dongna Shen, Sahil Patel | 2022-08-23 |
| 11417835 | Nitride capping layer for spin torque transfer (STT) magnetoresistive random access memory (MRAM) | Jodi Mari Iwata, Guenole Jan, Ru-Ying Tong, Jian Zhu, Huanlong Liu | 2022-08-16 |
| 11411174 | Silicon oxynitride based encapsulation layer for magnetic tunnel junctions | Yu-Jen Wang, Dongna Shen, Sahil Patel, Ru-Ying Tong | 2022-08-09 |
| 11316103 | Combined physical and chemical etch to reduce magnetic tunnel junction (MTJ) sidewall damage | Dongna Shen, Yu-Jen Wang, Ru-Ying Tong, Sahil Patel | 2022-04-26 |
| 11289645 | Method to integrate MRAM devices to the interconnects of 30nm and beyond CMOS technologies | Yi Yang, Dongna Shen, Sahil Patel, Ru-Ying Tong, Yu-Jen Wang | 2022-03-29 |
| 11087810 | Free layer structure in magnetic random access memory (MRAM) for Mo or W perpendicular magnetic anisotropy (PMA) enhancing layer | Hideaki Fukuzawa, Yu-Jen Wang, Ru-Ying Tong | 2021-08-10 |
| 11043632 | Ion beam etching process design to minimize sidewall re-deposition | Guenole Jan, Dongna Shen, Yi Yang, Yu-Jen Wang | 2021-06-22 |
| 11031548 | Reduce intermixing on MTJ sidewall by oxidation | Dongna Shen, Yi Yang, Sahil Patel, Yu-Jen Wang | 2021-06-08 |