Issued Patents All Time
Showing 1–25 of 26 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12402539 | STT-MRAM heat sink and magnetic shield structure design for more robust read/write performance | Tom Zhong, Jesmin Haq | 2025-08-26 |
| 12310245 | Etching and encapsulation scheme for magnetic tunnel junction fabrication | Vignesh Sundar, Yi Yang, Dongna Shen, Jesmin Haq, Sahil Patel +2 more | 2025-05-20 |
| 12207566 | MTJ device performance by adding stress modulation layer to MTJ device structure | Jesmin Haq, Tom Zhong, Vinh Lam, Vignesh Sundar | 2025-01-21 |
| 11963457 | MTJ device performance by controlling device shape | Jesmin Haq, Tom Zhong, Vinh Lam, Yi Yang | 2024-04-16 |
| 11895928 | Integration scheme for three terminal spin-orbit-torque (SOT) switching devices | Jesmin Haq, Tom Zhong, Luc Thomas, Dongna Shen | 2024-02-06 |
| 11785864 | MTJ device performance by adding stress modulation layer to mtj device structure | Jesmin Haq, Tom Zhong, Vinh Lam, Vignesh Sundar | 2023-10-10 |
| 11723286 | STT-MRAM heat sink and magnetic shield structure design for more robust read/write performance | Tom Zhong, Jesmin Haq | 2023-08-08 |
| 11631802 | Etching and encapsulation scheme for magnetic tunnel junction fabrication | Vignesh Sundar, Yi Yang, Dongna Shen, Jesmin Haq, Sahil Patel +2 more | 2023-04-18 |
| 11573494 | Critical dimension (CD) uniformity of photoresist island patterns using alternating phase shifting mask | Jesmin Haq, Tom Zhong | 2023-02-07 |
| 11545622 | CMP stop layer and sacrifice layer for high yield small size MRAM devices | Yi Yang, Yu-Jen Wang | 2023-01-03 |
| 11527711 | MTJ device performance by controlling device shape | Jesmin Haq, Tom Zhong, Vinh Lam, Yi Yang | 2022-12-13 |
| 11430945 | MTJ device performance by adding stress modulation layer to MTJ device structure | Jesmin Haq, Tom Zhong, Vinh Lam, Vignesh Sundar | 2022-08-30 |
| 11217746 | Ion beam etching fabricated sub 30nm Vias to reduce conductive material re-deposition for sub 60nm MRAM devices | Yi Yang, Dongna Shen, Jesmin Haq, Yu-Jen Wang | 2022-01-04 |
| 11088320 | Fabrication of large height top metal electrode for sub-60nm magnetoresistive random access memory (MRAM) devices | Yi Yang, Jesmin Haq, Yu-Jen Wang | 2021-08-10 |
| 10944049 | MTJ device performance by controlling device shape | Jesmin Haq, Tom Zhong, Vinh Lam, Yi Yang | 2021-03-09 |
| 10854809 | STT-MRAM heat sink and magnetic shield structure design for more robust read/write performance | Tom Zhong, Jesmin Haq | 2020-12-01 |
| 10831104 | Critical dimension (CD) uniformity of photoresist island patterns using alternating phase shifting mask | Jesmin Haq, Tom Zhong | 2020-11-10 |
| 10714679 | CMP stop layer and sacrifice layer for high yield small size MRAM devices | Yi Yang, Yu-Jen Wang | 2020-07-14 |
| 10680168 | Ion beam etching fabricated sub 30nm vias to reduce conductive material re-deposition for sub 60nm MRAM devices | Yi Yang, Dongna Shen, Jesmin Haq, Yu-Jen Wang | 2020-06-09 |
| 10520818 | Critical dimension (CD) uniformity of photoresist island patterns using alternating phase shifting mask | Jesmin Haq, Tom Zhong | 2019-12-31 |
| 10475987 | Method for fabricating a magnetic tunneling junction (MTJ) structure | Jesmin Haq, Tom Zhong, Vinh Lam, Vignesh Sundar | 2019-11-12 |
| 10475991 | Fabrication of large height top metal electrode for sub-60nm magnetoresistive random access memory (MRAM) devices | Yi Yang, Jesmin Haq, Yu-Jen Wang | 2019-11-12 |
| 10103322 | Method to remove sidewall damage after MTJ etching | Tom Zhong, Jesmin Haq | 2018-10-16 |
| 10069064 | Memory structure having a magnetic tunnel junction (MTJ) self-aligned to a T-shaped bottom electrode, and method of manufacturing the same | Jesmin Haq, Tom Zhong | 2018-09-04 |
| 9972777 | MTJ device process/integration method with pre-patterned seed layer | Jesmin Haq, Tom Zhong, Dongna Shen | 2018-05-15 |