Issued Patents All Time
Showing 1–25 of 62 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12414479 | Sub 60nm etchless MRAM devices by ion beam etching fabricated T-shaped bottom electrode | Yi Yang, Yu-Jen Wang | 2025-09-09 |
| 12310245 | Etching and encapsulation scheme for magnetic tunnel junction fabrication | Vignesh Sundar, Yi Yang, Zhongjian Teng, Jesmin Haq, Sahil Patel +2 more | 2025-05-20 |
| 12245516 | Self-aligned encapsulation hard mask to separate physically under-etched MTJ cells to reduce conductive re-deposition | Yi Yang, Vignesh Sundar, Yu-Jen Wang | 2025-03-04 |
| 12207567 | Under-cut via electrode for sub 60nm etchless MRAM devices by decoupling the via etch process | Yi Yang, Yu-Jen Wang | 2025-01-21 |
| 12185641 | Silicon oxynitride based encapsulation layer for magnetic tunnel junctions | Vignesh Sundar, Yu-Jen Wang, Sahil Patel, Ru-Ying Tong | 2024-12-31 |
| 11985905 | Highly physical ion resistive spacer to define chemical damage free sub 60nm MRAM devices | Yi Yang, Yu-Jen Wang | 2024-05-14 |
| 11930715 | Highly physical etch resistive photoresist mask to define large height sub 30nm via and metal hard mask for MRAM devices | Yi Yang, Yu-Jen Wang | 2024-03-12 |
| 11903324 | Post treatment to reduce shunting devices for physical etching process | Yu-Jen Wang, Vignesh Sundar, Sahil Patel | 2024-02-13 |
| 11895928 | Integration scheme for three terminal spin-orbit-torque (SOT) switching devices | Jesmin Haq, Tom Zhong, Luc Thomas, Zhongjian Teng | 2024-02-06 |
| 11856864 | Sub 60nm etchless MRAM devices by ion beam etching fabricated T-shaped bottom electrode | Yi Yang, Yu-Jen Wang | 2023-12-26 |
| 11818961 | Self-aligned encapsulation hard mask to separate physically under-etched MTJ cells to reduce conductive re-deposition | Yi Yang, Vignesh Sundar, Yu-Jen Wang | 2023-11-14 |
| 11800811 | MTJ CD variation by HM trimming | Yi Yang, Jesmin Haq, Yu-Jen Wang | 2023-10-24 |
| 11785863 | Under-cut via electrode for sub 60nm etchless MRAM devices by decoupling the via etch process | Yi Yang, Yu-Jen Wang | 2023-10-10 |
| 11696511 | Low resistance MgO capping layer for perpendicularly magnetized magnetic tunnel junctions | Sahil Patel, Guenole Jan, Ru-Ying Tong, Vignesh Sundar, Yu-Jen Wang +2 more | 2023-07-04 |
| 11631802 | Etching and encapsulation scheme for magnetic tunnel junction fabrication | Vignesh Sundar, Yi Yang, Zhongjian Teng, Jesmin Haq, Sahil Patel +2 more | 2023-04-18 |
| 11563171 | Highly physical ion resistive spacer to define chemical damage free sub 60 nm MRAM devices | Yi Yang, Yu-Jen Wang | 2023-01-24 |
| 11444241 | Self-aligned encapsulation hard mask to separate physically under-etched MTJ cells to reduce conductive R-deposition | Yi Yang, Vignesh Sundar, Yu-Jen Wang | 2022-09-13 |
| 11430947 | Sub 60nm etchless MRAM devices by ion beam etching fabricated t-shaped bottom electrode | Yi Yang, Yu-Jen Wang | 2022-08-30 |
| 11424405 | Post treatment to reduce shunting devices for physical etching process | Yu-Jen Wang, Vignesh Sundar, Sahil Patel | 2022-08-23 |
| 11411174 | Silicon oxynitride based encapsulation layer for magnetic tunnel junctions | Vignesh Sundar, Yu-Jen Wang, Sahil Patel, Ru-Ying Tong | 2022-08-09 |
| 11316103 | Combined physical and chemical etch to reduce magnetic tunnel junction (MTJ) sidewall damage | Yu-Jen Wang, Ru-Ying Tong, Vignesh Sundar, Sahil Patel | 2022-04-26 |
| 11289645 | Method to integrate MRAM devices to the interconnects of 30nm and beyond CMOS technologies | Yi Yang, Vignesh Sundar, Sahil Patel, Ru-Ying Tong, Yu-Jen Wang | 2022-03-29 |
| 11217746 | Ion beam etching fabricated sub 30nm Vias to reduce conductive material re-deposition for sub 60nm MRAM devices | Yi Yang, Zhongjian Teng, Jesmin Haq, Yu-Jen Wang | 2022-01-04 |
| 11145809 | Multiple spacer assisted physical etching of sub 60nm MRAM devices | Yi Yang, Yu-Jen Wang | 2021-10-12 |
| 11121314 | Large height tree-like sub 30nm vias to reduce conductive material re-deposition for sub 60nm MRAM devices | Yi Yang, Yu-Jen Wang | 2021-09-14 |