Issued Patents All Time
Showing 26–50 of 62 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11088321 | Highly selective ion beam etch hard mask for sub 60nm MRAM devices | Yi Yang, Yu-Jen Wang | 2021-08-10 |
| 11081642 | MTJ CD variation by HM trimming | Yi Yang, Jesmin Haq, Yu-Jen Wang | 2021-08-03 |
| 11043632 | Ion beam etching process design to minimize sidewall re-deposition | Vignesh Sundar, Guenole Jan, Yi Yang, Yu-Jen Wang | 2021-06-22 |
| 11031548 | Reduce intermixing on MTJ sidewall by oxidation | Yi Yang, Sahil Patel, Vignesh Sundar, Yu-Jen Wang | 2021-06-08 |
| 11024797 | Under-cut via electrode for sub 60 nm etchless MRAM devices by decoupling the via etch process | Yi Yang, Yu-Jen Wang | 2021-06-01 |
| 10964887 | Highly physical ion resistive spacer to define chemical damage free sub 60nm MRAM devices | Yi Yang, Yu-Jen Wang | 2021-03-30 |
| 10921707 | Self-adaptive halogen treatment to improve photoresist pattern and magnetoresistive random access memory (MRAM) device uniformity | Yi Yang, Jesmin Haq, Yu-Jen Wang | 2021-02-16 |
| 10886461 | Highly physical etch resistive photoresist mask to define large height sub 30nm via and metal hard mask for MRAM devices | Yi Yang, Yu-Jen Wang | 2021-01-05 |
| 10868242 | Sub 60nm etchless MRAM devices by ion beam etching fabricated T-shaped bottom electrode | Yi Yang, Yu-Jen Wang | 2020-12-15 |
| 10868237 | Self-aligned encapsulation hard mask to separate physically under-etched MTJ cells to reduce conductive R-deposition | Yi Yang, Vignesh Sundar, Yu-Jen Wang | 2020-12-15 |
| 10797232 | Low resistance MgO capping layer for perpendicularly magnetized magnetic tunnel junctions | Sahil Patel, Guenole Jan, Ru-Ying Tong, Vignesh Sundar, Yu-Jen Wang +2 more | 2020-10-06 |
| 10770654 | Multiple spacer assisted physical etching of sub 60nm MRAM devices | Yi Yang, Yu-Jen Wang | 2020-09-08 |
| 10756137 | MTJ patterning without etch induced device degradation assisted by hard mask trimming | Yi Yang, Yu-Jen Wang | 2020-08-25 |
| 10714680 | Large height tree-like sub 30nm vias to reduce conductive material re-deposition for sub 60nm MRAM devices | Yi Yang, Yu-Jen Wang | 2020-07-14 |
| 10700269 | Post treatment to reduce shunting devices for physical etching process | Yu-Jen Wang, Vignesh Sundar, Sahil Patel | 2020-06-30 |
| 10680168 | Ion beam etching fabricated sub 30nm vias to reduce conductive material re-deposition for sub 60nm MRAM devices | Yi Yang, Zhongjian Teng, Jesmin Haq, Yu-Jen Wang | 2020-06-09 |
| 10522741 | Under-cut via electrode for sub 60nm etchless MRAM devices by decoupling the via etch process | Yi Yang, Yu-Jen Wang | 2019-12-31 |
| 10522753 | Highly selective ion beam etch hard mask for sub 60nm MRAM devices | Yi Yang, Yu-Jen Wang | 2019-12-31 |
| 10522751 | MTJ CD variation by HM trimming | Yi Yang, Jesmin Haq, Yu-Jen Wang | 2019-12-31 |
| 10522749 | Combined physical and chemical etch to reduce magnetic tunnel junction (MTJ) sidewall damage | Yu-Jen Wang, Ru-Ying Tong, Vignesh Sundar, Sahil Patel | 2019-12-31 |
| 10522745 | Low resistance MgO capping layer for perpendicularly magnetized magnetic tunnel junctions | Sahil Patel, Guenole Jan, Ru-Ying Tong, Vignesh Sundar, Yu-Jen Wang +2 more | 2019-12-31 |
| 10516100 | Silicon oxynitride based encapsulation layer for magnetic tunnel junctions | Vignesh Sundar, Yu-Jen Wang, Sahil Patel, Ru-Ying Tong | 2019-12-24 |
| 10516102 | Multiple spacer assisted physical etching of sub 60nm MRAM devices | Yi Yang, Yu-Jen Wang | 2019-12-24 |
| 10418547 | Sub 60nm etchless MRAM devices by ion beam etching fabricated T-shaped bottom electrode | Yi Yang, Yu-Jen Wang | 2019-09-17 |
| 10388862 | Highly selective ion beam etch hard mask for sub 60nm MRAM devices | Yi Yang, Yu-Jen Wang | 2019-08-20 |