Issued Patents All Time
Showing 51–62 of 62 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10359699 | Self-adaptive halogen treatment to improve photoresist pattern and magnetoresistive random access memory (MRAM) device uniformity | Yi Yang, Jesmin Haq, Yu-Jen Wang | 2019-07-23 |
| 10297746 | Post treatment to reduce shunting devices for physical etching process | Yu-Jen Wang, Vignesh Sundar, Sahil Patel | 2019-05-21 |
| 10153427 | Magnetic tunnel junction (MTJ) performance by introducing oxidants to methanol with or without noble gas during MTJ etch | Yu-Jen Wang | 2018-12-11 |
| 10134981 | Free layer sidewall oxidation and spacer assisted magnetic tunnel junction (MTJ) etch for high performance magnetoresistive random access memory (MRAM) devices | Yi Yang, Yu-Jen Wang | 2018-11-20 |
| 10043851 | Etch selectivity by introducing oxidants to noble gas during physical magnetic tunnel junction (MTJ) etching | Yu-Jen Wang | 2018-08-07 |
| 10038138 | High temperature volatilization of sidewall materials from patterned magnetic tunnel junctions | Sahil Patel, Yu-Jen Wang | 2018-07-31 |
| 9972777 | MTJ device process/integration method with pre-patterned seed layer | Jesmin Haq, Tom Zhong, Zhongjian Teng | 2018-05-15 |
| 9935261 | Dielectric encapsulation layer for magnetic tunnel junction (MTJ) devices using radio frequency (RF) sputtering | Sahil Patel, Ru-Ying Tong, Yu-Jen Wang, Vignesh Sundar | 2018-04-03 |
| 9887350 | MTJ etching with improved uniformity and profile by adding passivation step | Yu-Jen Wang, Jesmin Haq | 2018-02-06 |
| 9871195 | Spacer assisted ion beam etching of spin torque magnetic random access memory | Yi Yang, Yu-Jen Wang | 2018-01-16 |
| 9660177 | Method to minimize MTJ sidewall damage and bottom electrode redeposition using IBE trimming | Rao Annapragada, Yu-Jen Wang | 2017-05-23 |
| 9608200 | Hybrid metallic hard mask stack for MTJ etching | Yu-Jen Wang, Tom Zhong | 2017-03-28 |