Issued Patents All Time
Showing 26–41 of 41 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10950782 | Nitride diffusion barrier structure for spintronic applications | Santiago Serrano Guisan, Luc Thomas, Jodi Mari Iwata, Guenole Jan | 2021-03-16 |
| 10868237 | Self-aligned encapsulation hard mask to separate physically under-etched MTJ cells to reduce conductive R-deposition | Yi Yang, Dongna Shen, Yu-Jen Wang | 2020-12-15 |
| 10797225 | Dual magnetic tunnel junction (DMTJ) stack design | Yu-Jen Wang, Luc Thomas, Guenole Jan, Sahil Patel, Ru-Ying Tong | 2020-10-06 |
| 10797232 | Low resistance MgO capping layer for perpendicularly magnetized magnetic tunnel junctions | Sahil Patel, Guenole Jan, Ru-Ying Tong, Dongna Shen, Yu-Jen Wang +2 more | 2020-10-06 |
| 10784310 | Cooling for PMA (perpendicular magnetic anisotropy) enhancement of STT-MRAM (spin torque transfer-magnetic random access memory) devices | Huanlong Liu, Guenole Jan, Ru-Ying Tong, Jian Zhu, Yuan-Jen Lee +2 more | 2020-09-22 |
| 10700269 | Post treatment to reduce shunting devices for physical etching process | Yu-Jen Wang, Dongna Shen, Sahil Patel | 2020-06-30 |
| 10665773 | Nitride capping layer for spin torque transfer (STT)-magnetoresistive random access memory (MRAM) | Jodi Mari Iwata, Guenole Jan, Ru-Ying Tong, Jian Zhu, Huanlong Liu | 2020-05-26 |
| 10622047 | Free layer structure in magnetic random access memory (MRAM) for Mo or W perpendicular magnetic anisotropy (PMA) enhancing layer | Hideaki Fukuzawa, Yu-Jen Wang, Ru-Ying Tong | 2020-04-14 |
| 10522749 | Combined physical and chemical etch to reduce magnetic tunnel junction (MTJ) sidewall damage | Dongna Shen, Yu-Jen Wang, Ru-Ying Tong, Sahil Patel | 2019-12-31 |
| 10522745 | Low resistance MgO capping layer for perpendicularly magnetized magnetic tunnel junctions | Sahil Patel, Guenole Jan, Ru-Ying Tong, Dongna Shen, Yu-Jen Wang +2 more | 2019-12-31 |
| 10522746 | Dual magnetic tunnel junction devices for magnetic random access memory (MRAM) | Yu-Jen Wang, Luc Thomas, Guenole Jan | 2019-12-31 |
| 10516100 | Silicon oxynitride based encapsulation layer for magnetic tunnel junctions | Yu-Jen Wang, Dongna Shen, Sahil Patel, Ru-Ying Tong | 2019-12-24 |
| 10475987 | Method for fabricating a magnetic tunneling junction (MTJ) structure | Jesmin Haq, Tom Zhong, Vinh Lam, Zhongjian Teng | 2019-11-12 |
| 10297746 | Post treatment to reduce shunting devices for physical etching process | Yu-Jen Wang, Dongna Shen, Sahil Patel | 2019-05-21 |
| 10115892 | Multilayer structure for reducing film roughness in magnetic devices | Jian Zhu, Guenole Jan, Yuan-Jen Lee, Huanlong Liu, Ru-Ying Tong +4 more | 2018-10-30 |
| 9935261 | Dielectric encapsulation layer for magnetic tunnel junction (MTJ) devices using radio frequency (RF) sputtering | Sahil Patel, Ru-Ying Tong, Dongna Shen, Yu-Jen Wang | 2018-04-03 |