Issued Patents All Time
Showing 25 most recent of 30 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9166165 | Uniform critical dimension size pore for PCRAM application | Matthew J. Breitwisch, Chung H. Lam, Hsiang-Lan Lung, Eric A. Joseph, Alejandro G. Schrott | 2015-10-20 |
| 9105583 | Catalytic etch with magnetic direction control | Eric A. Joseph, David W. Abraham, Alejandro G. Schrott, Ying Zhang | 2015-08-11 |
| 8897062 | Memory programming for a phase change memory cell | Matthew J. Breitwisch, Stefanie Chiras, Ibrahim M. Elfadel, Michele M. Franceschini, John P. Karidis +3 more | 2014-11-25 |
| 8772906 | Thermally insulated phase change material cells | Matthew J. BrightSky, Chung H. Lam, Eric A. Joseph, Bipin Rajendran, Alejandro G. Schrott +1 more | 2014-07-08 |
| 8743599 | Approach for phase change memory cells targeting different device specifications | Matthew J. BrightSky, Ming-Hsiu Lee | 2014-06-03 |
| 8716759 | Method to tailor location of peak electric field directly underneath an extension spacer for enhanced programmability of a prompt-shift device | Matthew J. Breitwisch, Jeffrey B. Johnson, Chung H. Lam, Beth Ann Rainey, Michael J. Zierak | 2014-05-06 |
| 8686391 | Pore phase change material cell fabricated from recessed pillar | Alejandro G. Schrott, Chung H. Lam, Eric A. Joseph, Matthew J. Breitwisch | 2014-04-01 |
| 8633464 | In via formed phase change memory cell with recessed pillar heater | Matthew J. Breitwisch, Eric A. Joseph, Chung H. Lam, Alejandro G. Schrott | 2014-01-21 |
| 8536675 | Thermally insulated phase change material memory cells | Matthew J. Breitwisch, Eric A. Joseph, Chung H. Lam, Bipin Rajendran, Alejandro G. Schrott +1 more | 2013-09-17 |
| 8466006 | Thermally insulated phase material cells | Matthew J. Breitwisch, Eric A. Joseph, Chung H. Lam, Bipin Rajendran, Alejandro G. Schrott +1 more | 2013-06-18 |
| 8447714 | System for electronic learning synapse with spike-timing dependent plasticity using phase change memory | Matthew J. Breitwisch, Chung H. Lam, Dharmendra S. Modha, Bipin Rajendran | 2013-05-21 |
| 8330137 | Pore phase change material cell fabricated from recessed pillar | Alejandro G. Schrott, Chung H. Lam, Eric A. Joseph, Matthew J. Breitwisch | 2012-12-11 |
| 8278197 | Method to tailor location of peak electric field directly underneath an extension spacer for enhanced programmability of a prompt-shift device | Matthew J. Breitwisch, Jeffrey B. Johnson, Chung H. Lam, Beth Ann Rainey, Michael J. Zierak | 2012-10-02 |
| 8238149 | Methods and apparatus for reducing defect bits in phase change memory | Yen-Hao Shih, Ming-Hsiu Lee, Chao-I Wu, Hsiang-Lan Lung, Chung H. Lam +2 more | 2012-08-07 |
| 8138056 | Thermally insulated phase change material memory cells with pillar structure | Matthew J. Breitwisch, Eric A. Joseph, Chung H. Lam, Bipin Rajendran, Alejandro G. Schrott +1 more | 2012-03-20 |
| 8115186 | Phase change memory cell with reduced switchable volume | Matthew J. Breitwisch, Eric A. Joseph, Chung H. Lam, Hsiang-Lan Lung, Alejandro G. Schrott | 2012-02-14 |
| 8105859 | In via formed phase change memory cell with recessed pillar heater | Matthew J. Breitwisch, Eric A. Joseph, Chung H. Lam, Alejandro G. Schrott | 2012-01-31 |
| 8023345 | Iteratively writing contents to memory locations using a statistical model | Matthew J. Breitwisch, Stefanie Chiras, Ibrahim M. Elfadel, Michele M. Franceschini, John P. Karidis +3 more | 2011-09-20 |
| 7960203 | Pore phase change material cell fabricated from recessed pillar | Alejandro G. Schrott, Chung H. Lam, Eric A. Joseph, Matthew J. Breitwisch | 2011-06-14 |
| 7901980 | Self-aligned in-contact phase change memory device | Chung H. Lam, Stephen M. Rossnagel, Alejandro G. Schrott | 2011-03-08 |
| 7851323 | Phase change material with filament electrode | Matthew J. Breitwisch, Eric A. Joseph, Chung H. Lam, Alejandro G. Schrott, Gerhard Ingmar Meijer | 2010-12-14 |
| 7682945 | Phase change element extension embedded in an electrode | Chung H. Lam, Matthew J. Breitwisch, Alejandro G. Schrott, Matthew D. Moon | 2010-03-23 |
| 7652914 | Memory including two access devices per phase change element | Thomas Nirschl, Mark C. H. Lamorey, Ming-Hsiu Lee | 2010-01-26 |
| 7560721 | Phase change material with filament electrode | Matthew J. Breitwisch, Eric A. Joseph, Chung H. Lam, Alejandro G. Schrott, Gerhard Ingmar Meijer | 2009-07-14 |
| 7485487 | Phase change memory cell with electrode | Matthew J. Breitwisch, Eric A. Joseph, Chung H. Lam, Alejandro G. Schrott | 2009-02-03 |