Issued Patents All Time
Showing 51–68 of 68 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 7242055 | Nitrogen-containing field effect transistor gate stack containing a threshold voltage control layer formed via deposition of a metal oxide | Nestor A. Bojarczuk, Cyril Cabral, Jr., Eduard A. Cartier, Martin M. Frank, Evgeni Gousev +4 more | 2007-07-10 |
| 7189431 | Method for forming a passivated metal layer | Hideaki Yamasaki, Kazuhito Nakamura, Yumiko Kawano, Gert Leusink, Fenton R. McFeely | 2007-03-13 |
| 7169674 | Complementary metal oxide semiconductor (CMOS) gate stack with high dielectric constant gate dielectric and integrated diffusion barrier | Nestor A. Bojarczuk, Kevin K. Chan, Christopher P. D'Emic, Evgeni Gousev, Supratik Guha +1 more | 2007-01-30 |
| 7115959 | Method of forming metal/high-k gate stacks with high mobility | Wanda Andreoni, Alessandro C. Callegari, Eduard A. Cartier, Alessandro Curioni, Christopher P. D'Emic +9 more | 2006-10-03 |
| 7109559 | Nitrided ultra thin gate dielectrics | Mukesh V. Khare, Christopher P. D'Emic, Thomas T. Hwang, James J. Quinlivan, Beth Ward | 2006-09-19 |
| 6982230 | Deposition of hafnium oxide and/or zirconium oxide and fabrication of passivated electronic structures | Cyril Cabral, Jr., Alessandro C. Callegari, Michael A. Gribelyuk, Dianne L. Lacey, Fenton R. McFeely +4 more | 2006-01-03 |
| 6974779 | Interfacial oxidation process for high-k gate dielectric process integration | David L. O'Meara, Cory Wajda, Tsuyoshi Takahashi, Alessandro C. Callegari, Kristen Scheer +1 more | 2005-12-13 |
| 6921711 | Method for forming metal replacement gate of high performance | Cyril Cabral, Jr., Victor Ku, Ying Li, Vijay Narayanan, An Steegen +2 more | 2005-07-26 |
| 6893979 | Method for improved plasma nitridation of ultra thin gate dielectrics | Mukesh V. Khare, Christopher P. D'Emic, Thomas T. Hwang, James J. Quinlivan, Beth Ward | 2005-05-17 |
| 6891231 | Complementary metal oxide semiconductor (CMOS) gate stack with high dielectric constant gate dielectric and integrated diffusion barrier | Nestor A. Bojarczuk, Kevin K. Chan, Christopher P. D'Emic, Evgeni Gousev, Supratik Guha +1 more | 2005-05-10 |
| 6784485 | Diffusion barrier layer and semiconductor device containing same | Stephan A. Cohen, Timothy J. Dalton, John A. Fitzsimmons, Stephen M. Gates, Lynne M. Gignac +5 more | 2004-08-31 |
| 6573197 | Thermally stable poly-Si/high dielectric constant material interfaces | Alessandro C. Callegari, Evgeni Gousev, Michael A. Gribelyuk, Dianne L. Lacey | 2003-06-03 |
| 6511876 | High mobility FETS using A1203 as a gate oxide | Douglas A. Buchanan, Alessandro C. Callegari, Michael A. Gribelyuk, Deborah A. Neumayer | 2003-01-28 |
| 6500772 | Methods and materials for depositing films on semiconductor substrates | Ashima B. Chakravarti, Richard A. Conti, Chester T. Dziobkowski, Thomas Ivers, Frank V. Liucci | 2002-12-31 |
| 6355567 | Retrograde openings in thin films | Scott D. Halle, David E. Kotecki, Richard S. Wise | 2002-03-12 |
| 6348419 | Modification of the wet characteristics of deposited layers and in-line control | Frank Grellner, Glen L. Miles, David C. Mosher, Emmanuel Batt | 2002-02-19 |
| 6345399 | Hard mask process to prevent surface roughness for selective dielectric etching | Tina Wagner, Richard S. Wise, Hongwen Yan | 2002-02-12 |
| 6252295 | Adhesion of silicon carbide films | Donna R. Cote, Daniel C. Edelstein, John A. Fitzsimmons, Thomas Ivers, Ernest N. Levine | 2001-06-26 |