| 6753252 |
Contact plug formation for devices with stacked capacitors |
Youngjin Park, Heon Lee, Greg Costrini |
2004-06-22 |
|
| 6727174 |
Method for fabricating a dual-diameter electrical conductor |
Katherine L. Saenger |
2004-04-27 |
$8,134,000 |
| 6544832 |
Method of fabricating a stack capacitor DRAM |
William H. Ma |
2003-04-08 |
$14,785,000 |
| 6429474 |
Storage-capacitor electrode and interconnect |
Jeffrey P. Gambino, Gary B. Bronner, Carl Radens |
2002-08-06 |
$5,918,000 |
| 6420272 |
Method for removal of hard mask used to define noble metal electrode |
Hua Shen, Satish D. Athavale, Jenny Lian, Gerhard Kunkel, Nimal Chaudhary |
2002-07-16 |
|
| 6395594 |
Method for simultaneously forming a storage-capacitor electrode and interconnect |
Carl Radens, Jeffrey P. Gambino, Gary B. Bronner |
2002-05-28 |
$13,038,000 |
| 6379577 |
Hydrogen peroxide and acid etchant for a wet etch process |
Hiroyuki Akatsu, Jingyu Lian, Hua Shen |
2002-04-30 |
$15,490,000 |
| 6365328 |
Semiconductor structure and manufacturing method |
Hua Shen, Satish D. Athavale, Jenny Lian, Laertis Economikos, Fen F. Jamin +2 more |
2002-04-02 |
|
| 6355567 |
Retrograde openings in thin films |
Scott D. Halle, Paul C. Jamison, Richard S. Wise |
2002-03-12 |
$13,941,000 |
| 6339007 |
Capacitor stack structure and method of fabricating description |
Yun-Yu Wang, Rajarao Jammy, Lee J. Kimball, Jenny Lian, Chenting Lin +4 more |
2002-01-15 |
$19,229,000 |
| 6323127 |
Capacitor formed with Pt electrodes having a 3D cup-like shape with roughened inner and outer surfaces |
Panayotis Andricacos, Gregory Costrini, Katherine L. Saenger |
2001-11-27 |
$23,652,000 |
| 6268259 |
Overhanging separator for self-defining stacked capacitor |
William H. Ma |
2001-07-31 |
$29,242,000 |
| 6262450 |
DRAM stack capacitor with vias and conductive connection extending from above conductive lines to the substrate |
William H. Ma |
2001-07-17 |
$23,321,000 |
| 6261967 |
Easy to remove hard mask layer for semiconductor device fabrication |
Satish D. Athavale, Hua Shen, Jenny Lian |
2001-07-17 |
|
| 6255157 |
Method for forming a ferroelectric capacitor under the bit line |
Louis L. Hsu, Jack A. Mandelman |
2001-07-03 |
$26,086,000 |
| 6242321 |
Structure and fabrication method for non-planar memory elements |
Raul E. Acosta, James H. Comfort, Alfred Grill, Katherine L. Saenger |
2001-06-05 |
$46,299,000 |
| 6222219 |
Crown capacitor using a tapered etch of a damascene lower electrode |
Jeffrey P. Gambino |
2001-04-24 |
$20,927,000 |
| 6207584 |
High dielectric constant material deposition to achieve high capacitance |
Hua Shen, Robert Benjamin Laibowitz, Katherine L. Saenger, Satish D. Athavale, Jenny Lian +3 more |
2001-03-27 |
|
| 6201272 |
Method for simultaneously forming a storage-capacitor electrode and interconnect |
Carl Radens, Jeffrey P. Gambino, Gary B. Bronner |
2001-03-13 |
$29,262,000 |
| 6191469 |
Overhanging separator for self-defining discontinuous film |
William H. Ma |
2001-02-20 |
$23,750,000 |
| 6178082 |
High temperature, conductive thin film diffusion barrier for ceramic/metal systems |
Mukta S. Farooq, Robert A. Rita, Stephen M. Rossnagel |
2001-01-23 |
$22,404,000 |
| 6166423 |
Integrated circuit having a via and a capacitor |
Jeffrey P. Gambino, Mark A. Jaso |
2000-12-26 |
$36,095,000 |
| 6165864 |
Tapered electrode for stacked capacitors |
Hua Shen, Joachim Nuetzel, Carl Radens |
2000-12-26 |
|
| 6153491 |
Overhanging separator for self-defining discontinuous film |
William H. Ma |
2000-11-28 |
$55,341,000 |
| 6150230 |
Trench separator for self-defining discontinuous film |
William H. Ma |
2000-11-21 |
$39,339,000 |
