Beth Ward — 9 Patents at IBM | Patent Leaderboard

Beth Ward has been granted 9 US patents while listed as an inventor at IBM. The first was granted in 2003 and the most recent in April 2014. Beth Ward ranks #535,341 of 4,157,543 US inventors in our database (top 12.9%). Patent records list Beth Ward in South Burlington, VT, US.

Issued Patents All Time

Showing 1–9 of 9 patents

Patent #	Title	Co-Inventors	Date	Approx Value ⓘ
8709887	Method for fabricating a nitrided silicon-oxide gate dielectric	Jay Burnham, James S. Nakos, James J. Quinlivan, Bernie Roque, Steven M. Shank	2014-04-29	$5,775,000
7714366	CMOS transistor with a polysilicon gate electrode having varying grain size	Arne Ballantine, Kevin K. Chan, Jeffrey D. Gilbert, Kevin M. Houlihan, Glen L. Miles +3 more	2010-05-11	$5,650,000
7291568	Method for fabricating a nitrided silicon-oxide gate dielectric	Jay Burnham, James S. Nakos, James J. Quinlivan, Bernie Roque, Steven M. Shank	2007-11-06	$19,194,000
7109559	Nitrided ultra thin gate dielectrics	Mukesh V. Khare, Christopher P. D'Emic, Thomas T. Hwang, Paul C. Jamison, James J. Quinlivan	2006-09-19	$6,659,000
6909157	Thermal nitrogen distribution method to improve uniformity of highly doped ultra-thin gate capacitors	Jay Burnham, James S. Nakos, James J. Quinlivan, Steven M. Shank, Deborah A. Tucker	2005-06-21	$6,933,000
6893948	Method of reducing polysilicon depletion in a polysilicon gate electrode by depositing polysilicon of varying grain size	Arne Ballantine, Kevin K. Chan, Jeffrey D. Gilbert, Kevin M. Houlihan, Glen L. Miles +3 more	2005-05-17	$7,073,000
6893979	Method for improved plasma nitridation of ultra thin gate dielectrics	Mukesh V. Khare, Christopher P. D'Emic, Thomas T. Hwang, Paul C. Jamison, James J. Quinlivan	2005-05-17	$7,073,000
6706644	Thermal nitrogen distribution method to improve uniformity of highly doped ultra-thin gate capacitors	Jay Burnham, James S. Nakos, James J. Quinlivan, Steven M. Shank, Deborah A. Tucker	2004-03-16	$17,709,000
6670263	Method of reducing polysilicon depletion in a polysilicon gate electrode by depositing polysilicon of varying grain size	Arne Ballantine, Kevin K. Chan, Jeffrey D. Gilbert, Kevin M. Houlihan, Glen L. Miles +3 more	2003-12-30	$8,971,000

Beth Ward — 9 Patents

Issued Patents All Time

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