BW

Beth Ward

IBM: 9 patents #11,918 of 70,183Top 20%
Overall (All Time): #576,526 of 4,157,543Top 15%
9
Patents All Time

Issued Patents All Time

Patent #TitleCo-InventorsDate
8709887 Method for fabricating a nitrided silicon-oxide gate dielectric Jay Burnham, James S. Nakos, James J. Quinlivan, Bernie Roque, Steven M. Shank 2014-04-29
7714366 CMOS transistor with a polysilicon gate electrode having varying grain size Arne Ballantine, Kevin K. Chan, Jeffrey D. Gilbert, Kevin M. Houlihan, Glen L. Miles +3 more 2010-05-11
7291568 Method for fabricating a nitrided silicon-oxide gate dielectric Jay Burnham, James S. Nakos, James J. Quinlivan, Bernie Roque, Steven M. Shank 2007-11-06
7109559 Nitrided ultra thin gate dielectrics Mukesh V. Khare, Christopher P. D'Emic, Thomas T. Hwang, Paul C. Jamison, James J. Quinlivan 2006-09-19
6909157 Thermal nitrogen distribution method to improve uniformity of highly doped ultra-thin gate capacitors Jay Burnham, James S. Nakos, James J. Quinlivan, Steven M. Shank, Deborah A. Tucker 2005-06-21
6893948 Method of reducing polysilicon depletion in a polysilicon gate electrode by depositing polysilicon of varying grain size Arne Ballantine, Kevin K. Chan, Jeffrey D. Gilbert, Kevin M. Houlihan, Glen L. Miles +3 more 2005-05-17
6893979 Method for improved plasma nitridation of ultra thin gate dielectrics Mukesh V. Khare, Christopher P. D'Emic, Thomas T. Hwang, Paul C. Jamison, James J. Quinlivan 2005-05-17
6706644 Thermal nitrogen distribution method to improve uniformity of highly doped ultra-thin gate capacitors Jay Burnham, James S. Nakos, James J. Quinlivan, Steven M. Shank, Deborah A. Tucker 2004-03-16
6670263 Method of reducing polysilicon depletion in a polysilicon gate electrode by depositing polysilicon of varying grain size Arne Ballantine, Kevin K. Chan, Jeffrey D. Gilbert, Kevin M. Houlihan, Glen L. Miles +3 more 2003-12-30