Issued Patents All Time
Showing 1–9 of 9 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8154130 | Self-aligned metal to form contacts to Ge containing substrates and structure formed thereby | Cyril Cabral, Jr., Roy A. Carruthers, Christophe Detavernier, Christian Lavoie, Huiling Shang | 2012-04-10 |
| 8003524 | Plating seed layer including an oxygen/nitrogen transition region for barrier enhancement | Chih-Chao Yang, Christian Lavoie, Shom Ponoth, Terry A. Spooner | 2011-08-23 |
| 7786578 | Eliminating metal-rich silicides using an amorphous Ni alloy silicide structure | Christophe Detavenier, Christian Lavoie, Conal E. Murray | 2010-08-31 |
| 7732870 | Eliminating metal-rich silicides using an amorphous Ni alloy silicide structure | Christophe Detavenier, Christian Lavoie, Conal E. Murray | 2010-06-08 |
| 7682968 | Self-aligned metal to form contacts to Ge containing substrates and structure formed thereby | Cyril Cabral, Jr., Roy A. Carruthers, Christophe Detavernier, Christian Lavoie, Huiling Shang | 2010-03-23 |
| 7498254 | Plating seed layer including an oxygen/nitrogen transition region for barrier enhancement | Chih-Chao Yang, Christian Lavoie, Shom Ponoth, Terry A. Spooner | 2009-03-03 |
| 7449782 | Self-aligned metal to form contacts to Ge containing substrates and structure formed thereby | Cyril Cabral, Jr., Roy A. Carruthers, Christophe Detavernier, Christian Lavoie, Huiling Shang | 2008-11-11 |
| 7419907 | Eliminating metal-rich silicides using an amorphous Ni alloy silicide structure | Christophe Detavernier, Christian Lavoie, Conal E. Murray | 2008-09-02 |
| 7215006 | Plating seed layer including an oxygen/nitrogen transition region for barrier enhancement | Chih-Chao Yang, Christian Lavoie, Shom Ponoth, Terry A. Spooner | 2007-05-08 |