| 10396070 |
Fin-shaped field effect transistor and capacitor structures |
Changyok Park, Akira Ito |
2019-08-27 |
|
| 10312365 |
Laterally diffused MOSFET on fully depleted SOI having low on-resistance |
Qing Liu, Akira Ito |
2019-06-04 |
|
| 10262992 |
Three dimensional LVDMOS transistor structures |
Qing Liu, Akira Ito |
2019-04-16 |
|
| 10236354 |
Three dimensional monolithic LDMOS transistor |
Qing Liu |
2019-03-19 |
|
| 10192781 |
Interconnect structures incorporating air gap spacers |
Satya V. Nitta |
2019-01-29 |
$19,198,000 |
| 10134631 |
Size-filtered multimetal structures |
David V. Horak, Charles W. Koburger, III, Chih-Chao Yang |
2018-11-20 |
$2,951,000 |
| 10121789 |
Self-aligned source/drain contacts |
Praneet Adusumilli, Emre Alptekin, Kangguo Cheng, Balasubramanian Pranatharthiharan |
2018-11-06 |
$3,429,000 |
| 10115821 |
FDSOI LDMOS semiconductor device |
Akira Ito, Qing Liu |
2018-10-30 |
$332,836,000 |
| 9953978 |
Replacement gate structures for transistor devices |
Ruilong Xie, Kisik Choi, Su Chen Fan |
2018-04-24 |
$8,335,000 |
| 9941271 |
Fin-shaped field effect transistor and capacitor structures |
Changyok Park, Akira Ito |
2018-04-10 |
$114,470,000 |
| 9935168 |
Gate contact with vertical isolation from source-drain |
David V. Horak, Balasubramanian Pranatharthiharan, Ruilong Xie |
2018-04-03 |
$2,801,000 |
| 9825141 |
Three dimensional monolithic LDMOS transistor |
Qing Liu |
2017-11-21 |
$38,662,000 |
| 9799524 |
Extended drain MOS device for FDSOI devices |
Akira Ito |
2017-10-24 |
$72,717,000 |
| 9793378 |
Fin field effect transistor device with reduced overlap capacitance and enhanced mechanical stability |
Nicolas Loubet, Prasanna Khare, Qing Liu, Balasubramanian Pranatharthiharan |
2017-10-17 |
$6,800,000 |
| 9768055 |
Isolation regions for SOI devices |
Qing Liu, Nicolas Loubet, Prasanna Khare, Maud Vinet, Bruce B. Doris |
2017-09-19 |
$9,858,000 |
| 9741722 |
Dummy gate structure for electrical isolation of a fin DRAM |
John E. Barth, Jr., Kangguo Cheng, Bruce B. Doris, Herbert L. Ho, Ali Khakifirooz +4 more |
2017-08-22 |
$2,056,000 |
| 9711503 |
Gate structures with protected end surfaces to eliminate or reduce unwanted EPI material growth |
Ruilong Xie, Juntao Li |
2017-07-18 |
$11,753,000 |
| 9698148 |
Reduced footprint LDMOS structure for finFET technologies |
Akira Ito |
2017-07-04 |
|
| 9673087 |
Interconnect structures incorporating air-gap spacers |
Satya V. Nitta |
2017-06-06 |
$2,871,000 |
| 9660030 |
Replacement gate electrode with a self-aligned dielectric spacer |
Marc A. Bergendahl, Steven J. Holmes, David V. Horak, Charles W. Koburger, III, Chih-Chao Yang |
2017-05-23 |
$8,404,000 |
| 9633893 |
Method to protect against contact related shorts on UTBB |
Nicolas Loubet, Qing Liu |
2017-04-25 |
$1,937,000 |
| 9627377 |
Self-aligned dielectric isolation for FinFET devices |
Marc A. Bergendahl, Kangguo Cheng, David V. Horak, Ali Khakifirooz, Theodorus E. Standaert +4 more |
2017-04-18 |
$12,891,000 |
| 9620619 |
Borderless contact structure |
Veeraraghavan S. Basker, David V. Horak, Charles W. Koburger, III, Chih-Chao Yang |
2017-04-11 |
$14,156,000 |
| 9614047 |
Gate contact with vertical isolation from source-drain |
David V. Horak, Balasubramanian Pranatharthiharan, Ruilong Xie |
2017-04-04 |
$2,713,000 |
| 9613851 |
Method for manufacturing interconnect structures incorporating air gap spacers |
Satya V. Nitta |
2017-04-04 |
$2,713,000 |
