Issued Patents All Time
Showing 26–50 of 223 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9595578 | Undercut insulating regions for silicon-on-insulator device | Kangguo Cheng, Bruce B. Doris, Balasubramanian Pranatharthiharan, Theodorus E. Standaert, Tenko Yamashita | 2017-03-14 |
| 9583613 | Metal oxide semiconductor devices and fabrication methods | Akira Ito | 2017-02-28 |
| 9576957 | Self-aligned source/drain contacts | Praneet Adusumilli, Emre Alptekin, Kangguo Cheng, Balasubramanian Pranatharthiharan | 2017-02-21 |
| 9564445 | Dummy gate structure for electrical isolation of a fin DRAM | John E. Barth, Jr., Kangguo Cheng, Bruce B. Doris, Herbert L. Ho, Ali Khakifirooz +4 more | 2017-02-07 |
| 9558991 | Formation of isolation surrounding well implantation | Kangguo Cheng, Theodorus E. Standaert, Tenko Yamashita | 2017-01-31 |
| 9548356 | Shallow trench isolation structures | Bruce B. Doris, Kangguo Cheng, Balasubramanian S. Haran, Ali Khakifirooz, Pranita Kerber +1 more | 2017-01-17 |
| 9515163 | Methods of forming FinFET semiconductor devices with self-aligned contact elements using a replacement gate process and the resulting devices | Ruilong Xie, Balasubramanian Pranatharthiharan | 2016-12-06 |
| 9508587 | Formation of isolation surrounding well implantation | Kangguo Cheng, Theodorus E. Standaert, Tenko Yamashita | 2016-11-29 |
| 9502292 | Dual shallow trench isolation liner for preventing electrical shorts | Bruce B. Doris, Prasanna Khare, Qing Liu, Nicolas Loubet, Maud Vinet | 2016-11-22 |
| 9484254 | Size-filtered multimetal structures | David V. Horak, Charles W. Koburger, III, Chih-Chao Yang | 2016-11-01 |
| 9478549 | FinFET with dielectric isolation by silicon-on-nothing and method of fabrication | Kangguo Cheng, Balasubramanian S. Haran, Theodorus E. Standaert, Tenko Yamashita | 2016-10-25 |
| 9472616 | Undercut insulating regions for silicon-on-insulator device | Kangguo Cheng, Bruce B. Doris, Balasubramanian Pranatharthiharan, Theodorus E. Standaert, Tenko Yamashita | 2016-10-18 |
| 9437504 | Method for the formation of fin structures for FinFET devices | Nicolas Loubet, Prasanna Khare, Qing Liu, Balasubramanian Pranatharthiharan | 2016-09-06 |
| 9418902 | Forming isolated fins from a substrate | Kangguo Cheng, Balasubramanian Pranatharthiharan, Theodorus E. Standaert, Tenko Yamashita | 2016-08-16 |
| 9406665 | Integrated passive devices for finFET technologies | Thomas N. Adam, Kangguo Cheng, Balasubramanian Pranatharthi Haran, Theodorus E. Standaert, Tenko Yamashita | 2016-08-02 |
| 9406570 | FinFET device | Kangguo Cheng, Balasubramanian S. Haran, Theodorus E. Standaert, Tenko Yamashita | 2016-08-02 |
| 9406548 | Formation of isolation surrounding well implantation | Kangguo Cheng, Theodorus E. Standaert, Tenko Yamashita | 2016-08-02 |
| 9379212 | Extended-drain transistor using inner spacer | Qintao Zhang, Akira Ito | 2016-06-28 |
| 9379236 | LDMOS device and structure for bulk FinFET technology | Akira Ito | 2016-06-28 |
| 9379135 | FinFET semiconductor device having increased gate height control | Kangguo Cheng, Ali Khakifirooz, Raghavasimhan Sreenivasan | 2016-06-28 |
| 9379198 | Integrated circuit structure having selectively formed metal cap | Chih-Chao Yang, David V. Horak, Charles W. Koburger, III | 2016-06-28 |
| 9373697 | Spacer replacement for replacement metal gate semiconductor devices | Sanjay C. Mehta, Muthumanickam Sankarapandian, Theodorus E. Standaert, Tenko Yamashita | 2016-06-21 |
| 9368343 | Reduced external resistance finFET device | Kangguo Cheng, Raghavasimhan Sreenivasan, Theodorus E. Standaert, Tenko Yamashita | 2016-06-14 |
| 9349838 | Semiconductor structure with deep trench thermal conduction | Kangguo Cheng, Balasubramanian Pranatharthi Haran, Junjun Li, Theodorus E. Standaert, Tenko Yamashita | 2016-05-24 |
| 9349598 | Gate contact with vertical isolation from source-drain | David V. Horak, Balasubramanian Pranatharthiharan, Ruilong Xie | 2016-05-24 |