Issued Patents All Time
Showing 76–100 of 223 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9214378 | Undercut insulating regions for silicon-on-insulator device | Kangguo Cheng, Bruce B. Doris, Balasubramanian S. Haran, Theodorus E. Standaert, Tenko Yamashita | 2015-12-15 |
| 9214397 | Structure and method to modulate threshold voltage for high-K metal gate field effect transistors (FETs) | Bruce B. Doris, Kangguo Cheng, Steven J. Holmes, Ali Khakifirooz, Pranita Kerber +2 more | 2015-12-15 |
| 9209202 | Enabling bulk FINFET-based devices for FINFET technology with dielectric isolation | Changyok Park | 2015-12-08 |
| 9202879 | Mask free protection of work function material portions in wide replacement gate electrodes | Charles W. Koburger, III, Marc A. Bergendahl, David V. Horak, Chih-Chao Yang | 2015-12-01 |
| 9202749 | Process methods for advanced interconnect patterning | Chih-Chao Yang | 2015-12-01 |
| 9190487 | Prevention of fin erosion for semiconductor devices | Ali Khakifirooz, Thomas N. Adam, Kangguo Cheng, Alexander Reznicek, Raghavasimhan Sreenivasan +2 more | 2015-11-17 |
| 9190465 | FinFET device | Kangguo Cheng, Balasubramanian S. Haran, Theodorus E. Standaert, Tenko Yamashita | 2015-11-17 |
| 9190313 | Shallow trench isolation structures | Bruce B. Doris, Kangguo Cheng, Balasubramanian S. Haran, Ali Khakifirooz, Pranita Kerber +1 more | 2015-11-17 |
| 9178019 | Fin isolation in multi-gate field effect transistors | Kangguo Cheng, Balasubramanian S. Haran, Ali Khakifirooz, Theodorus E. Standaert, Tenko Yamashita | 2015-11-03 |
| 9177820 | Sub-lithographic semiconductor structures with non-constant pitch | Marc A. Bergendahl, David V. Horak, Charles W. Koburger, III, Chih-Chao Yang | 2015-11-03 |
| 9171757 | Dual shallow trench isolation liner for preventing electrical shorts | Bruce B. Doris, Prasanna Khare, Qing Liu, Nicolas Loubet, Maud Vinet | 2015-10-27 |
| 9171927 | Spacer replacement for replacement metal gate semiconductor devices | Sanjay C. Mehta, Muthumanickam Sankarapandian, Theodorus E. Standaert, Tenko Yamashita | 2015-10-27 |
| 9165936 | Dummy end-gate based anti-fuse device for finFET technologies | Akira Ito, Changyok Park | 2015-10-20 |
| 9159653 | Copper interconnect structures and methods of making same | Chih-Chao Yang, Marc A. Bergendahl, David V. Horak, Baozhen Li | 2015-10-13 |
| 9147576 | Gate contact with vertical isolation from source-drain | David V. Horak, Balasubramanian Pranatharthiharan, Ruilong Xie | 2015-09-29 |
| 9141749 | Interconnect structures and methods for back end of the line integration | David V. Horak, Charles W. Koburger, III, Chih-Chao Yang | 2015-09-22 |
| 9105693 | Microelectronic structure including air gap | Daniel C. Edelstein, David V. Horak, Elbert E. Huang, Satyanarayana V. Nitta, Takeshi Nogami +1 more | 2015-08-11 |
| 9105641 | Profile control in interconnect structures | Shyng-Tsong Chen, Samuel S. Choi, Steven J. Holmes, David V. Horak, Charles W. Koburger, III +4 more | 2015-08-11 |
| 9105617 | Methods and structures for eliminating or reducing line end epi material growth on gate structures | Ruilong Xie, Juntao Li | 2015-08-11 |
| 9105606 | Self aligned contact with improved robustness | Kangguo Cheng, Ali Khakifirooz, Raghavasimhan Sreenivasan | 2015-08-11 |
| 9093564 | Integrated passive devices for FinFET technologies | Kangguo Cheng, Thomas N. Adam, Balasubramanian Pranatharthi Haran, Theodorus E. Standaert, Tenko Yamashita | 2015-07-28 |
| 9082873 | Method and structure for finFET with finely controlled device width | Tenko Yamashita, Kangguo Cheng, Balasubramanian S. Haran, Theodorus E. Standaert | 2015-07-14 |
| 9082853 | Bulk finFET with punchthrough stopper region and method of fabrication | Kangguo Cheng, Ali Khakifirooz, Ragvahasimhan Sreenivasan | 2015-07-14 |
| 9064801 | Bi-layer gate cap for self-aligned contact formation | David V. Horak, Jin-Wook Lee, Daniel T. Pham, Balasubramanian Pranatharthiharan | 2015-06-23 |
| 9059270 | Replacement gate MOSFET with raised source and drain | David V. Horak, Chih-Chao Yang | 2015-06-16 |