Issued Patents All Time
Showing 101–125 of 223 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9059243 | Shallow trench isolation structures | Bruce B. Doris, Kangguo Cheng, Balasubramanian S. Haran, Ali Khakifirooz, Pranita Kulkarni +1 more | 2015-06-16 |
| 9059251 | Microelectronic structure including air gap | Daniel C. Edelstein, David V. Horak, Elbert E. Huang, Satyanarayana V. Nitta, Takeshi Nogami +1 more | 2015-06-16 |
| 9059254 | Overlay-tolerant via mask and reactive ion etch (RIE) technique | Steven J. Holmes, David V. Horak, Charles W. Koburger, III, Chih-Chao Yang | 2015-06-16 |
| 9059270 | Replacement gate MOSFET with raised source and drain | David V. Horak, Chih-Chao Yang | 2015-06-16 |
| 9041116 | Structure and method to modulate threshold voltage for high-K metal gate field effect transistors (FETs) | Bruce B. Doris, Kangguo Cheng, Steven J. Holmes, Ali Khakifirooz, Pranita Kulkarni +2 more | 2015-05-26 |
| 9034703 | Self aligned contact with improved robustness | Kangguo Cheng, Ali Khakifirooz, Raghavasimhan Sreenivasan | 2015-05-19 |
| 9000522 | FinFET with dielectric isolation by silicon-on-nothing and method of fabrication | Kangguo Cheng, Balasubramanian S. Haran, Theodorus E. Standaert, Tenko Yamashita | 2015-04-07 |
| 8999774 | Bulk fin-field effect transistors with well defined isolation | Kangguo Cheng, Balasubramanian S. Haran, Theodorus E. Standaert, Tenko Yamashita | 2015-04-07 |
| 8999799 | Maskless dual silicide contact formation | Praneet Adusumilli, Emre Alptekin, Kangguo Cheng, Balasubramanian Pranatharthiharan | 2015-04-07 |
| 8993382 | Bulk fin-field effect transistors with well defined isolation | Kangguo Cheng, Balasubramanian S. Haran, Theodorus E. Standaert, Tenko Yamashita | 2015-03-31 |
| 8987837 | Stress enhanced finFET devices | Kangguo Cheng, Balasubramanian S. Haran, Theodorus E. Standaert, Tenko Yamashita | 2015-03-24 |
| 8987790 | Fin isolation in multi-gate field effect transistors | Kangguo Cheng, Balasubramanian S. Haran, Ali Khakifirooz, Theodorus E. Standaert, Tenko Yamashita | 2015-03-24 |
| 8987070 | SOI device with embedded liner in box layer to limit STI recess | Kangguo Cheng, Balasubramanian S. Haran | 2015-03-24 |
| 8946908 | Dual-metal self-aligned wires and vias | Steven J. Holmes, David V. Horak, Charles W. Koburger, III, Chih-Chao Yang | 2015-02-03 |
| 8946792 | Dummy fin formation by gas cluster ion beam | Kangguo Cheng, Balasubramanian S. Haran, Ali Khakifirooz, Theodorus E. Standaert, Tenko Yamashita | 2015-02-03 |
| 8946006 | Replacement gate MOSFET with raised source and drain | David V. Horak, Chih-Chao Yang | 2015-02-03 |
| 8941179 | Finfets and fin isolation structures | Marc A. Bergendahl, David V. Horak, Charles W. Koburger, III, Chih-Chao Yang | 2015-01-27 |
| 8941156 | Self-aligned dielectric isolation for FinFET devices | Marc A. Bergendahl, Kangguo Cheng, David V. Horak, Ali Khakifirooz, Theodorus E. Standaert +4 more | 2015-01-27 |
| 8937359 | Contact formation for ultra-scaled devices | Ruilong Xie, David V. Horak, Balasubramanian Pranatharthiharan | 2015-01-20 |
| 8932918 | FinFET with self-aligned punchthrough stopper | Kangguo Cheng, Balasubramanian S. Haran, Theodorus E. Standaert, Tenko Yamashita | 2015-01-13 |
| 8928067 | Bulk fin-field effect transistors with well defined isolation | Kangguo Cheng, Balasubramanian S. Haran, Theodorus E. Standaert, Tenko Yamashita | 2015-01-06 |
| 8912627 | Electrical fuse structure and method of fabricating same | Chih-Chao Yang, David V. Horak, Charles W. Koburger, III | 2014-12-16 |
| 8907458 | Creation of vias and trenches with different depths | David V. Horak, Takeshi Nogami, Chih-Chao Yang | 2014-12-09 |
| 8906807 | Single fin cut employing angled processing methods | Marc A. Bergendahl, David V. Horak, Charles W. Koburger, III, Chih-Chao Yang | 2014-12-09 |
| 8901744 | Hybrid copper interconnect structure and method of fabricating same | Chih-Chao Yang, David V. Horak, Charles W. Koburger, III | 2014-12-02 |