Issued Patents All Time
Showing 25 most recent of 49 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12408368 | Method of making a semiconductor device using a dummy gate | Nicolas Loubet | 2025-09-02 |
| 12278234 | Multi-fin FINFET device including epitaxial growth barrier on outside surfaces of outermost fins and related methods | Qing Liu, Nicolas Loubet | 2025-04-15 |
| 11670554 | Method to co-integrate SiGe and Si channels for finFET devices | Nicolas Loubet, Qing Liu | 2023-06-06 |
| 11610886 | Multi-fin FINFET device including epitaxial growth barrier on outside surfaces of outermost fins and related methods | Qing Liu, Nicolas Loubet | 2023-03-21 |
| 11069682 | Multi-fin FINFET device including epitaxial growth barrier on outside surfaces of outermost fins and related methods | Qing Liu, Nicolas Loubet | 2021-07-20 |
| 10580771 | Multi-fin FINFET device including epitaxial growth barrier on outside surfaces of outermost fins and related methods | Qing Liu, Nicolas Loubet | 2020-03-03 |
| 10340195 | Method to co-integrate SiGe and Si channels for finFET devices | Nicolas Loubet, Qing Liu | 2019-07-02 |
| 10170475 | Silicon-on-nothing transistor semiconductor structure with channel epitaxial silicon region | Stephane Allegret-Maret, Kangguo Cheng, Bruce B. Doris, Qing Liu, Nicolas Loubet | 2019-01-01 |
| 10170546 | Fully substrate-isolated FinFET transistor | Nicolas Loubet | 2019-01-01 |
| 10134899 | Facet-free strained silicon transistor | Nicolas Loubet, Qing Liu | 2018-11-20 |
| 10134895 | Facet-free strained silicon transistor | Nicolas Loubet, Qing Liu | 2018-11-20 |
| 10062690 | Multi-fin FINFET device including epitaxial growth barrier on outside surfaces of outermost fins and related methods | Qing Liu, Nicolas Loubet | 2018-08-28 |
| 10038075 | Silicon-on-nothing transistor semiconductor structure with channel epitaxial silicon-germanium region | Stephane Allegret-Maret, Kangguo Cheng, Bruce B. Doris, Qing Liu, Nicolas Loubet | 2018-07-31 |
| 9991351 | Method of making a semiconductor device using a dummy gate | Nicolas Loubet | 2018-06-05 |
| 9905662 | Method of making a semiconductor device using a dummy gate | Nicolas Loubet | 2018-02-27 |
| 9893147 | Fully substrate-isolated FinFET transistor | Nicolas Loubet | 2018-02-13 |
| 9847260 | Method to co-integrate SiGe and Si channels for finFET devices | Nicolas Loubet, Qing Liu | 2017-12-19 |
| 9793378 | Fin field effect transistor device with reduced overlap capacitance and enhanced mechanical stability | Nicolas Loubet, Shom Ponoth, Qing Liu, Balasubramanian Pranatharthiharan | 2017-10-17 |
| 9768055 | Isolation regions for SOI devices | Qing Liu, Nicolas Loubet, Shom Ponoth, Maud Vinet, Bruce B. Doris | 2017-09-19 |
| 9685380 | Method to co-integrate SiGe and Si channels for finFET devices | Nicolas Loubet, Qing Liu | 2017-06-20 |
| 9673222 | Fin isolation structures facilitating different fin isolation schemes | Ajey Poovannummoottil Jacob, Kangguo Cheng, Bruce B. Doris, Nicolas Loubet, Rama Divakaruni | 2017-06-06 |
| 9620507 | Silicon-on-nothing transistor semiconductor structure with channel epitaxial silicon-germanium region | Nicolas Loubet, Qing Liu, Stephane Allegret-Maret, Bruce B. Doris, Kangguo Cheng | 2017-04-11 |
| 9620506 | Silicon-on-nothing transistor semiconductor structure with channel epitaxial silicon region | Nicolas Loubet, Qing Liu, Stephane Allegret-Maret, Bruce B. Doris, Kangguo Cheng | 2017-04-11 |
| 9520393 | Fully substrate-isolated FinFET transistor | Nicolas Loubet | 2016-12-13 |
| 9502292 | Dual shallow trench isolation liner for preventing electrical shorts | Bruce B. Doris, Shom Ponoth, Qing Liu, Nicolas Loubet, Maud Vinet | 2016-11-22 |