Issued Patents All Time
Showing 26–49 of 49 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9437504 | Method for the formation of fin structures for FinFET devices | Nicolas Loubet, Qing Liu, Balasubramanian Pranatharthiharan, Shom Ponoth | 2016-09-06 |
| 9419111 | Multi-fin FINFET device including epitaxial growth barrier on outside surfaces of outermost fins and related methods | Qing Liu, Nicolas Loubet | 2016-08-16 |
| 9349730 | Fin transformation process and isolation structures facilitating different Fin isolation schemes | Ajey Poovannummoottil Jacob, Kangguo Cheng, Bruce B. Doris, Nicolas Loubet, Ramachandra Divakaruni | 2016-05-24 |
| 9252052 | Dual shallow trench isolation liner for preventing electrical shorts | Bruce B. Doris, Shom Ponoth, Qing Liu, Nicolas Loubet, Maud Vinet | 2016-02-02 |
| 9171757 | Dual shallow trench isolation liner for preventing electrical shorts | Bruce B. Doris, Shom Ponoth, Qing Liu, Nicolas Loubet, Maud Vinet | 2015-10-27 |
| 9166023 | Bulk finFET semiconductor-on-nothing integration | Nicolas Loubet, Jin Cho | 2015-10-20 |
| 9123809 | Transistor having a stressed body | Nicolas Loubet, Qing Liu | 2015-09-01 |
| 9099570 | Method for the formation of dielectric isolated fin structures for use, for example, in FinFET devices | Nicolas Loubet | 2015-08-04 |
| 9093496 | Process for faciltiating fin isolation schemes | Ajey Poovannummoottil Jacob, Kangguo Cheng, Bruce B. Doris, Nicolas Loubet, Ramachandra Divakaruni | 2015-07-28 |
| 9093556 | Multi-fin FINFET device including epitaxial growth barrier on outside surfaces of outermost fins and related methods | Qing Liu, Nicolas Loubet | 2015-07-28 |
| 9082788 | Method of making a semiconductor device including an all around gate | Nicolas Loubet, Huiming Bu | 2015-07-14 |
| 9012999 | Semiconductor device with an inclined source/drain and associated methods | Qing Liu, Nicolas Loubet | 2015-04-21 |
| 9006816 | Memory device having multiple dielectric gate stacks and related methods | Stephane Allegret-Maret, Nicolas Loubet, Qing Liu, Hemanth Jagannathan, Lisa F. Edge +2 more | 2015-04-14 |
| 9000491 | Layer formation with reduced channel loss | Nicolas Loubet, Qing Liu | 2015-04-07 |
| 9000555 | Electronic device including shallow trench isolation (STI) regions with bottom nitride liner and upper oxide liner and related methods | Qing Liu, Nicolas Loubet | 2015-04-07 |
| 8987082 | Method of making a semiconductor device using sacrificial fins | Nicolas Loubet | 2015-03-24 |
| 8956942 | Method of forming a fully substrate-isolated FinFET transistor | Nicolas Loubet | 2015-02-17 |
| 8860123 | Memory device having multiple dielectric gate stacks with first and second dielectric layers and related methods | Stephane Allegret-Maret, Nicolas Loubet, Qing Liu, Hemanth Jagannathan, Lisa F. Edge +2 more | 2014-10-14 |
| 8828851 | Method to enable the formation of silicon germanium channel of FDSOI devices for PFET threshold voltage engineering | Nicolas Loubet, Qing Liu | 2014-09-09 |
| 8796147 | Layer formation with reduced channel loss | Nicolas Loubet, Qing Liu | 2014-08-05 |
| 8759874 | FinFET device with isolated channel | Nicolas Loubet | 2014-06-24 |
| 8703550 | Dual shallow trench isolation liner for preventing electrical shorts | Bruce B. Doris, Shom Ponoth, Qing Liu, Nicolas Loubet, Maud Vinet | 2014-04-22 |
| 8237229 | Method and apparatus for buried-channel semiconductor device | — | 2012-08-07 |
| 8187975 | Hydrochloric acid etch and low temperature epitaxy in a single chamber for raised source-drain fabrication | Nicolas Loubet, Qing Liu | 2012-05-29 |