Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Replacement gate structures for transistor devices

Replacement gate structures for transistor devices

US Patent 9953978 · Granted Apr 24, 2018

Estimated economic value: $8,335,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Vertical field effect transistor with minimal contact to gate erosion2025
Semiconductor device having hybrid middle of line contacts2025
Stacked field effect transistor structure with independent gate control between 2025
Bottom contact with self-aligned spacer for stacked semiconductor devices2025
TSV and backside power distribution structure2025
Wraparound contact with reduced distance to channel2025
Nanowire source/drain formation for nanosheet device2025
Local enlarged via-to-backside power rail2025
Skip-level TSV with hybrid dielectric scheme for backside power delivery2025
Dual structured buried rail2025
Method and structure of forming independent contact for staggered CFET2025
Strain generation and anchoring in gate-all-around field effect transistors2025