Issued Patents All Time
Showing 51–75 of 173 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10388652 | Intergrated circuit structure including single diffusion break abutting end isolation region, and methods of forming same | Yongiun Shi, Lei Sun, Laertis Economikos, Ruilong Xie, Lars Liebmann +4 more | 2019-08-20 |
| 10381272 | Techniques for forming multiple work function nanosheet device | — | 2019-08-13 |
| 10366930 | Self-aligned gate cut isolation | Ruilong Xie, Chanro Park, Kangguo Cheng, Guillaume Bouche | 2019-07-30 |
| 10319627 | Air-gap spacers for field-effect transistors | Chanro Park, Hoon Kim, Ruilong Xie | 2019-06-11 |
| 10312154 | Method of forming vertical FinFET device having self-aligned contacts | Ruilong Xie, Steven Bentley, Puneet Harischandra Suvarna, Chanro Park, Lars Liebmann +2 more | 2019-06-04 |
| 10297597 | Composite isolation structures for a fin-type field effect transistor | Ruilong Xie, Chanro Park, Murat Kerem Akarvardar | 2019-05-21 |
| 10290549 | Integrated circuit structure, gate all-around integrated circuit structure and methods of forming same | Ruilong Xie, Julien Frougier, Edward J. Nowak, Nigel G. Cave, Lars Liebmann +2 more | 2019-05-14 |
| 10283617 | Hybrid spacer integration for field-effect transistors | Ruilong Xie, Dong-Ick Lee, Chanro Park | 2019-05-07 |
| 10236291 | Methods, apparatus and system for STI recess control for highly scaled finFET devices | Chanro Park, Hoon Kim, Ruilong Xie, Kwan-Yong Lim | 2019-03-19 |
| 10229855 | Methods of forming transistor devices with different threshold voltages and the resulting devices | Hoon Kim, Ruilong Xie, Chanro Park | 2019-03-12 |
| 10217846 | Vertical field effect transistor formation with critical dimension control | Ruilong Xie, Steven Bentley, Chanro Park, Steven R. Soss, Hui Zang +8 more | 2019-02-26 |
| 10177241 | Methods of forming a gate contact for a transistor above the active region and an air gap adjacent the gate of the transistor | Chanro Park, Ruilong Xie, Hoon Kim | 2019-01-08 |
| 10177041 | Fin-type field effect transistors (FINFETS) with replacement metal gates and methods | Ruilong Xie, Laertis Economikos, Chanro Park | 2019-01-08 |
| 10176996 | Replacement metal gate and fabrication process with reduced lithography steps | Chanro Park, Hoon Kim | 2019-01-08 |
| 10170484 | Integrated circuit structure incorporating multiple gate-all-around field effect transistors having different drive currents and method | Ruilong Xie, Bipul C. Paul | 2019-01-01 |
| 10170544 | Integrated circuit products that include FinFET devices and a protection layer formed on an isolation region | Ruilong Xie, Christopher M. Prindle, Tek Po Rinus Lee | 2019-01-01 |
| 10163900 | Integration of vertical field-effect transistors and saddle fin-type field effect transistors | Ruilong Xie, Kwan-Yong Lim | 2018-12-25 |
| 10157798 | Uniform bottom spacers in vertical field effect transistors | Cheng Chi, Ruilong Xie, Tenko Yamashita | 2018-12-18 |
| 10121702 | Methods, apparatus and system for forming source/drain contacts using early trench silicide cut | Chanro Park, Ruilong Xie, Puneet Harischandra Suvarna | 2018-11-06 |
| 10103238 | Nanosheet field-effect transistor with full dielectric isolation | Hui Zang, Tek Po Rinus Lee, Haigou Huang, Ruilong Xie, Chanro Park | 2018-10-16 |
| 10084053 | Gate cuts after metal gate formation | Ruilong Xie, Chanro Park | 2018-09-25 |
| 10038065 | Method of forming a semiconductor device with a gate contact positioned above the active region | Ruilong Xie, Chanro Park, Hoon Kim | 2018-07-31 |
| 10026655 | Dual liner CMOS integration methods for FinFET devices | Chanro Park, Ruilong Xie, Hoon Kim | 2018-07-17 |
| 10014389 | Methods of forming IC products comprising a nano-sheet device and a transistor device having first and second replacement gate structures | Ruilong Xie, Chanro Park, Hoon Kim | 2018-07-03 |
| 10014297 | Methods of forming integrated circuit structure using extreme ultraviolet photolithography technique and related integrated circuit structure | Lei Sun, Wenhui Wang, Xunyuan Zhang, Ruilong Xie, Jia Zeng +2 more | 2018-07-03 |