Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Silicon-on-insulator substrate with built-in substrate junction

Silicon-on-insulator substrate with built-in substrate junction

US Patent 8482009 · Granted Jul 9, 2013

Estimated economic value: $6,470,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Transistors and methods of forming transistors using vertical nanowires2022
Transistor structure with varied gate cross-sectional area2020
Transistors and methods of forming transistors using vertical nanowires2020
Structure and method for tensile and compressive strained silicon germanium with2020
Fin replacement in a field-effect transistor2019
Low-cost SOI FinFET technology2019
Fin cut without residual fin defects2019
Structure and method for tensile and compressive strained silicon germanium with2019
Semiconductor structure having insulator pillars and semiconductor material on s2019
Fin field-effect transistor having an oxide layer under one or more of the plura2019
Self-aligned nanotube structures2019
Low defect III-V semiconductor template on porous silicon2018