Jong-ho Yang — 19 Patents at Samsung

Jong-ho Yang has been granted 19 US patents while listed as an inventor at Samsung. The first was granted in 2005 and the most recent in August 2017. Jong-ho Yang ranks #229,345 of 4,157,543 US inventors in our database (top 5.5%). Patent records list Jong-ho Yang in Yongin-si, NY, KR.

Issued Patents All Time

Showing 1–19 of 19 patents

Patent #	Title	Co-Inventors	Date	Approx Value ⓘ
9741396	Converting apparatus, contents converting method, and computer readable recording medium	Bong-gil Bak, Sung-wook Park	2017-08-22
9454995	Information storage medium storing content, content providing method, content reproducing method and apparatus therefor	Sung-Ryeul Rhyu, Bong-gil Bak	2016-09-27
9147424	Apparatus and method for reproducing an optical recording, and computer-readable recording medium	Bong-gil Bak, Sung-Ryeul Rhyu, Min Seok Kim	2015-09-29
9124858	Content processing apparatus for processing high resolution content and content processing method thereof	Yong-seok JANG, Sung-wook Park, Tae-yun Chung, Min Seok Kim, Bong-gil Bak +2 more	2015-09-01
8338245	Integrated circuit system employing stress-engineered spacers	Jae Gon Lee, Victor Chan, Jun Jung Kim	2012-12-25
8198194	Methods of forming p-channel field effect transistors having SiGe source/drain regions	Hyung-Rae Lee, Jin-Ping Han, Chung Woh Lai, Henry K. Utomo, Thomas W. Dyer	2012-06-12	$5,600,000
8030196	Transistor formation using capping layer	Bong-Seok Seo, Dong-Hee Yu, O Sung Kwon, Oh-Jung Kwon	2011-10-04	$5,606,000
7935593	Stress optimization in dual embedded epitaxially grown semiconductor processing	Jin-Ping Han, Chung Woh Lai, Henry K. Utomo	2011-05-03	$5,933,000
7838372	Methods of manufacturing semiconductor devices and structures thereof	Jin-Ping Han, Chung Woh Lai, Henry K. Utomo	2010-11-23	$4,291,000
7790622	Methods for removing gate sidewall spacers in CMOS semiconductor fabrication processes	Kyoung-Woo Lee, Ja-Hum Ku, Jun Jung Kim, Chong-Kwang Chang, Min-Chul Sun +1 more	2010-09-07	$2,081,000
7651729	Method of fabricating metal silicate layer using atomic layer deposition technique	Yun Seok Kim, Jong-Pyo Kim, Ha-Jin Lim, Jae-Eun Park, Hyung-Suk Jung +1 more	2010-01-26
7510969	Electrode line structure having fine line width and method of forming the same	Joo Won Lee, Kang-soo Chu, Jae-Eun Park	2009-03-31
7396777	Method of fabricating high-k dielectric layer having reduced impurity	Hyung-Suk Jung, Jong Ho Lee, Ha-Jin Lim, Jae-Eun Park, Yun Seok Kim	2008-07-08
7180190	Electrode line structure having fine line width and method of forming the same	Joo Won Lee, Kang-soo Chu, Jae-Eun Park	2007-02-20
7084076	Method for forming silicon dioxide film using siloxane	Jae-Eun Park, Kang-soo Chu, Joo Won Lee	2006-08-01
6992019	Methods for forming silicon dioxide layers on substrates using atomic layer deposition	Joo Won Lee, Jae-Eun Park, Kang-soo Chu	2006-01-31
6989231	Method of forming fine patterns using silicon oxide layer	Jae-Eun Park, Kang-soo Chu, Joo Won Lee	2006-01-24
6933245	Method of forming a thin film with a low hydrogen content on a semiconductor device	Seung Hwan Lee	2005-08-23
6858533	Semiconductor device having an etch stopper formed of a sin layer by low temperature ALD and method of fabricating the same	Kang-soo Chu, J o-won Lee, Jae-Eun Park	2005-02-22

Jong-ho Yang — 19 Patents

Issued Patents All Time

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