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Home › Planar field effect transistor structure having an angled crystallographic etch-defined source/drain recess and a method of forming the transistor structure

Planar field effect transistor structure having an angled crystallographic etch-defined source/drain recess and a method of forming the transistor structure

US Patent 8377785 · Granted Feb 19, 2013

Estimated economic value: $3,959,000 ⓘ

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