Issued Patents All Time
Showing 25 most recent of 84 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11893500 | Data classification for data lake catalog | Marcio T. Moura, Jo A. Ramos, Deepak Rangarao | 2024-02-06 |
| 11887010 | Data classification for data lake catalog | Marcio T. Moura, Jo A. Ramos, Deepak Rangarao | 2024-01-30 |
| 11514314 | Modeling environment noise for training neural networks | Aaron K. Baughman, Gary William Reiss, Shikhar Kwatra | 2022-11-29 |
| 11493901 | Detection of defect in edge device manufacturing by artificial intelligence | Igor Khapov | 2022-11-08 |
| 11188317 | Classical artificial intelligence (AI) and probability based code infusion | Aaron K. Baughman, Gary William Reiss, Shikhar Kwatra | 2021-11-30 |
| 10680085 | Transistor structure with varied gate cross-sectional area | Dominic J. Schepis, Alexander Reznicek, Pranita Kerber | 2020-06-09 |
| 10643907 | Structure and method for tensile and compressive strained silicon germanium with same germanium concentration by single epitaxy step | Pranita Kerber, Alexander Reznicek, Dominic J. Schepis | 2020-05-05 |
| 10374042 | Semiconductor device including epitaxially formed buried channel region | Jie Deng, Pranita Kerber, Alexander Reznicek | 2019-08-06 |
| 10204837 | Structure and method for tensile and compressive strained silicon germanium with same germanium concentration by single epitaxy step | Pranita Kerber, Alexander Reznicek, Dominic J. Schepis | 2019-02-12 |
| 10176990 | SiGe FinFET with improved junction doping control | Pranita Kerber, Alexander Reznicek | 2019-01-08 |
| 10002798 | Structure and method for tensile and compressive strained silicon germanium with same germanium concentration by single epitaxy step | Pranita Kerber, Alexander Reznicek, Dominic J. Schepis | 2018-06-19 |
| 9972711 | Reduced resistance short-channel InGaAs planar MOSFET | Pranita Kerber, Alexander Reznicek | 2018-05-15 |
| 9966457 | Transistor structure with varied gate cross-sectional area | Dominic J. Schepis, Alexander Reznicek, Pranita Kerber | 2018-05-08 |
| 9812556 | Semiconductor device and method of manufacturing the semiconductor device | Shogo Mochizuki, Gen Tsutsui, Raghavasimhan Sreenivasan, Pranita Kerber, Alexander Reznicek | 2017-11-07 |
| 9741807 | FinFET device with vertical silicide on recessed source/drain epitaxy regions | Keith E. Fogel, Pranita Kerber, Alexander Reznicek | 2017-08-22 |
| 9679969 | Semiconductor device including epitaxially formed buried channel region | Jie Deng, Pranita Kerber, Alexander Reznicek | 2017-06-13 |
| 9643181 | Integrated microfluidics system | Hung-Yang Chang, Ning Li, Fei Liu, Seshadri Subbanna, Yajuan Wang | 2017-05-09 |
| 9647119 | Structure and method for tensile and compressive strained silicon germanium with same germanium concentration by single epitaxy step | Pranita Kerber, Alexander Reznicek, Dominic J. Schepis | 2017-05-09 |
| 9595598 | Semiconductor device including epitaxially formed buried channel region | Jie Deng, Pranita Kerber, Alexander Reznicek | 2017-03-14 |
| 9590106 | Semiconductor device including epitaxially formed buried channel region | Jie Deng, Pranita Kerber, Alexander Reznicek | 2017-03-07 |
| 9576806 | FinFET device with vertical silicide on recessed source/drain epitaxy regions | Keith E. Fogel, Pranita Kerber, Alexander Reznicek | 2017-02-21 |
| 9530699 | Semiconductor device including gate channel having adjusted threshold voltage | Pranita Kerber, Alexander Reznicek | 2016-12-27 |
| 9505611 | Integration of electromechanical and CMOS devices in front-end-of-line using replacement metal gate process flow | Fei Liu, Keith Kwong Hon Wong | 2016-11-29 |
| 9502408 | FinFET device including fins having a smaller thickness in a channel region, and a method of manufacturing same | Pranita Kerber, Alexander Reznicek | 2016-11-22 |
| 9502420 | Structure and method for highly strained germanium channel fins for high mobility pFINFETs | Stephen W. Bedell, Lisa F. Edge, Pranita Kerber, Alexander Reznicek | 2016-11-22 |