Issued Patents All Time
Showing 1–25 of 94 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11094537 | Group III nitride composite substrate and method for manufacturing the same, and method for manufacturing group III nitride semiconductor device | Keiji Ishibashi, Akihiro Hachigo, Yuki Hiromura, Naoki Matsumoto, Fumitake Nakanishi +6 more | 2021-08-17 |
| 10837124 | Gallium nitride substrate | Makoto Kiyama, Ryu Hirota | 2020-11-17 |
| 10600676 | Group III nitride composite substrate and method for manufacturing the same, and method for manufacturing group III nitride semiconductor device | Keiji Ishibashi, Akihiro Hachigo, Yuki Hiromura, Naoki Matsumoto, Fumitake Nakanishi +6 more | 2020-03-24 |
| 10458043 | Gallium nitride substrate | Makoto Kiyama, Ryu Hirota | 2019-10-29 |
| 10443151 | Gallium nitride substrate | Makoto Kiyama, Ryu Hirota | 2019-10-15 |
| 10078059 | Nitride crystal, nitride crystal substrate, epilayer-containing nitride crystal substrate, semiconductor device and method of manufacturing the same | Keiji Ishibashi, Tokiko Kaji, Takayuki Nishiura | 2018-09-18 |
| 10006147 | Gallium nitride substrate | Makoto Kiyama, Ryu Hirota | 2018-06-26 |
| 9917004 | Group III nitride composite substrate and method for manufacturing the same, and method for manufacturing group III nitride semiconductor device | Keiji Ishibashi, Akihiro Hachigo, Yuki Hiromura, Naoki Matsumoto, Fumitake Nakanishi +6 more | 2018-03-13 |
| 9570540 | Nitride crystal, nitride crystal substrate, epilayer-containing nitride crystal substrate, semiconductor device and method of manufacturing the same | Keiji Ishibashi, Tokiko Kaji, Takayuki Nishiura | 2017-02-14 |
| 9368568 | Group III nitride crystal substrates and group III nitride crystal | Koji Uematsu, Hideki Osada, Shinsuke Fujiwara | 2016-06-14 |
| 9252207 | Composite substrate | Yoko Maeda, Fumitaka Sato, Akihiro Hachigo | 2016-02-02 |
| 9136337 | Group III nitride composite substrate and method for manufacturing the same, laminated group III nitride composite substrate, and group III nitride semiconductor device and method for manufacturing the same | Keiji Ishibashi, Akihiro Hachigo, Yuki Hiromura, Naoki Matsumoto, Fumitake Nakanishi +2 more | 2015-09-15 |
| 9064706 | Composite of III-nitride crystal on laterally stacked substrates | Naho Mizuhara, Koji Uematsu, Michimasa Miyanaga, Keisuke Tanizaki, Hideaki Nakahata +1 more | 2015-06-23 |
| 8872309 | Composite of III-nitride crystal on laterally stacked substrates | Naho Mizuhara, Koji Uematsu, Michimasa Miyanaga, Keisuke Tanizaki, Hideaki Nakahata +1 more | 2014-10-28 |
| 8847363 | Method for producing group III nitride crystal | Koji Uematsu, Hideki Osada, Shinsuke Fujiwara | 2014-09-30 |
| 8845992 | III-nitride single-crystal ingot, III-nitride single-crystal substrate, method of manufacturing III-nitride single-crystal ingot, and method of manufacturing III-nitride single-crystal substrate | Takuji Okahisa, Tomoki Uemura | 2014-09-30 |
| 8828140 | Nitride crystal, nitride crystal substrate, epilayer-containing nitride crystal substrate, semiconductor device and method of manufacturing the same | Keiji Ishibashi, Tokiko Kaji, Takayuki Nishiura | 2014-09-09 |
| 8823142 | GaN single crystal substrate having a large area and a main surface whose plane orientation is other than (0001) and (000-1) | Shinsuke Fujiwara, Koji Uematsu, Hideki Osada | 2014-09-02 |
| 8772787 | Prepared and stored GaN substrate | Hideyuki Ijiri | 2014-07-08 |
| 8709923 | Method of manufacturing III-nitride crystal | Naho Mizuhara, Koji Uematsu, Michimasa Miyanaga, Keisuke Tanizaki, Hideaki Nakahata +1 more | 2014-04-29 |
| 8664085 | Method of manufacturing composite substrate | Yoko Maeda, Fumitaka Sato, Akihiro Hachigo | 2014-03-04 |
| 8598685 | GaN single crystal substrate and method of manufacturing thereof and GaN-based semiconductor device and method of manufacturing thereof | Shinsuke Fujiwara, Koji Uematsu, Hideki Osada | 2013-12-03 |
| 8524575 | Group III nitride crystal and method for producing the same | Koji Uematsu, Hideki Osada, Shinsuke Fujiwara | 2013-09-03 |
| 8501592 | Freestanding III-nitride single-crystal substrate and method of manufacturing semiconductor device utilizing the substrate | Shinsuke Fujiwara | 2013-08-06 |
| 8476158 | Method of preparing and storing GaN substrate, prepared and stored GaN substrate, and semiconductor device and method of its manufacture | Hideyuki Ijiri | 2013-07-02 |