Issued Patents All Time
Showing 1–25 of 48 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11094537 | Group III nitride composite substrate and method for manufacturing the same, and method for manufacturing group III nitride semiconductor device | Keiji Ishibashi, Yuki Hiromura, Naoki Matsumoto, Seiji Nakahata, Fumitake Nakanishi +6 more | 2021-08-17 |
| 10600676 | Group III nitride composite substrate and method for manufacturing the same, and method for manufacturing group III nitride semiconductor device | Keiji Ishibashi, Yuki Hiromura, Naoki Matsumoto, Seiji Nakahata, Fumitake Nakanishi +6 more | 2020-03-24 |
| 10186451 | Group III nitride composite substrate and method for manufacturing the same, and method for manufacturing group III nitride semiconductor device | Keiji Ishibashi, Naoki Matsumoto | 2019-01-22 |
| 9917004 | Group III nitride composite substrate and method for manufacturing the same, and method for manufacturing group III nitride semiconductor device | Keiji Ishibashi, Yuki Hiromura, Naoki Matsumoto, Seiji Nakahata, Fumitake Nakanishi +6 more | 2018-03-13 |
| 9312340 | Group III nitride composite substrate and method for manufacturing the same, laminated group III nitride composite substrate, and group III nitride semiconductor device and method for manufacturing the same | Makoto Kiyama, Keiji Ishibashi, Naoki Matsumoto, Fumitake Nakanishi | 2016-04-12 |
| 9312165 | Group III nitride composite substrate and method for manufacturing the same, and method for manufacturing group III nitride semiconductor device | Keiji Ishibashi, Naoki Matsumoto | 2016-04-12 |
| 9252207 | Composite substrate | Yoko Maeda, Fumitaka Sato, Seiji Nakahata | 2016-02-02 |
| 9136337 | Group III nitride composite substrate and method for manufacturing the same, laminated group III nitride composite substrate, and group III nitride semiconductor device and method for manufacturing the same | Keiji Ishibashi, Yuki Hiromura, Naoki Matsumoto, Seiji Nakahata, Fumitake Nakanishi +2 more | 2015-09-15 |
| 8884306 | Semiconductor device and method for manufacturing the same | Takashi Kyono, Kuniaki Ishihara, Takahisa YOSHIDA, Masaki Ueno, Makoto Kiyama | 2014-11-11 |
| 8664085 | Method of manufacturing composite substrate | Yoko Maeda, Fumitaka Sato, Seiji Nakahata | 2014-03-04 |
| 8349078 | Method of forming nitride semiconductor epitaxial layer and method of manufacturing nitride semiconductor device | Hiromu Shiomi, Yu Saitoh, Kazuhide Sumiyoshi, Makoto Kiyama, Seiji Nakahata | 2013-01-08 |
| 8283694 | GaN substrate, epitaxial layer-provided substrate, methods of manufacturing the same, and method of manufacturing semiconductor device | Keiji Ishibashi, Masato Irikura, Seiji Nakahata | 2012-10-09 |
| 8183668 | Gallium nitride substrate | — | 2012-05-22 |
| 8177911 | Damage evaluation method of compound semiconductor member, production method of compound semiconductor member, gallium nitride compound semiconductor member and gallium nitride compound semiconductor membrane | Takayuki Nishiura | 2012-05-15 |
| 8143140 | Substrate having thin film of GaN joined thereon and method of fabricating the same, and a GaN-based semiconductor device and method of fabricating the same | Hitoshi Kasai, Yoshiki Miura, Katsushi Akita | 2012-03-27 |
| 8124498 | Method of manufacturing group III nitride semiconductor layer bonded substrate | — | 2012-02-28 |
| 8115927 | Production method of compound semiconductor member | Takayuki Nishiura, Keiji Ishibashi | 2012-02-14 |
| 8101968 | Group III nitride substrate, epitaxial layer-provided substrate, methods of manufacturing the same, and method of manufacturing semiconductor device | Keiji Ishibashi, Masato Irikura, Seiji Nakahata | 2012-01-24 |
| 7960284 | III-V compound semiconductor substrate manufacturing method | Naoki Matsumoto, Takayuki Nishiura | 2011-06-14 |
| 7901960 | Group III nitride substrate, epitaxial layer-provided substrate, methods of manufacturing the same, and method of manufacturing semiconductor device | Keiji Ishibashi, Masato Irikura, Seiji Nakahata | 2011-03-08 |
| 7728348 | Substrate having thin film of GaN joined thereon and method of fabricating the same, and a GaN-based semiconductor device and method of fabricating the same | Hitoshi Kasai, Yoshiki Miura, Katsushi Akita | 2010-06-01 |
| 7569493 | Nitride-based compound semiconductor, method of cleaning a compound semiconductor, method of producing the same, and substrate | Takayuki Nishiura | 2009-08-04 |
| 7554175 | Gallium nitride substrate, and gallium-nitride-substrate testing and manufacturing methods | — | 2009-06-30 |
| 6984918 | Saw device | Katsuhiro Itakura, Satoshi Fujii, Hideaki Nakahata, Shinichi Shikata | 2006-01-10 |
| 6713941 | Surface acoustic wave element | Katsuhiro Itakura, Hideaki Nakahata, Satoshi Fujii, Shinichi Shikata | 2004-03-30 |