Issued Patents All Time
Showing 1–19 of 19 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8471264 | Method of manufacturing GaN substrate, method of manufacturing epitaxialwafer, method of manufacturing semiconductor device and epitaxialwafer | Fumitake Nakanishi | 2013-06-25 |
| 8143140 | Substrate having thin film of GaN joined thereon and method of fabricating the same, and a GaN-based semiconductor device and method of fabricating the same | Hitoshi Kasai, Akihiro Hachigo, Katsushi Akita | 2012-03-27 |
| 7932114 | Method of manufacturing GaN substrate, method of manufacturing epitaxialwafer, method of manufacturing semiconductor device and epitaxialwafer | Fumitake Nakanishi | 2011-04-26 |
| 7915635 | Semiconductor light-emitting element and substrate used in formation of the same | Katsushi Akita, Hitoshi Kasai, Kensaku Motoki | 2011-03-29 |
| 7915149 | Gallium nitride substrate and gallium nitride layer formation method | Seiji Nakahata, Fumitaka Sato, Akinori Koukitu, Yoshinao Kumagai | 2011-03-29 |
| 7843040 | Gallium nitride baseplate and epitaxial substrate | Akinori Koukitu, Yoshinao Kumagai, Kikurou Takemoto, Fumitaka Sato | 2010-11-30 |
| 7816238 | GaN substrate, substrate with epitaxial layer, semiconductor device, and method of manufacturing GaN substrate | Hideki Osada, Hitoshi Kasai, Keiji Ishibashi, Seiji Nakahata, Takashi Kyono +1 more | 2010-10-19 |
| 7728348 | Substrate having thin film of GaN joined thereon and method of fabricating the same, and a GaN-based semiconductor device and method of fabricating the same | Hitoshi Kasai, Akihiro Hachigo, Katsushi Akita | 2010-06-01 |
| 7518216 | Gallium nitride baseplate, epitaxial substrate, and method of forming gallium nitride | Akinori Koukitu, Yoshinao Kumagai, Kikurou Takemoto, Fumitaka Sato | 2009-04-14 |
| 6294019 | Method of making group III-V compound semiconductor wafer | Toshiyuki Morimoto | 2001-09-25 |
| 6031252 | Epitaxial wafer and method of preparing the same | Mitsuru Shimazu, Kensaku Motoki, Takuji Okahisa, Masato Matsushima, Hisashi Seki +1 more | 2000-02-29 |
| 5970314 | Process for vapor phase epitaxy of compound semiconductor | Takuji Okahisa, Mitsuru Shimazu, Masato Matsushima, Kensaku Motoki, Hisashi Seki +1 more | 1999-10-19 |
| 5962875 | Light emitting device, wafer for light emitting device, and method of preparing the same | Kensaku Motoki, Mitsuru Shimazu | 1999-10-05 |
| 5864573 | Epitaxial wafer and compound semiconductor light emitting device, and method of fabricating the same | Hideki Matsubara, Hisashi Seki, Akinori Koukitu | 1999-01-26 |
| 5843590 | Epitaxial wafer and method of preparing the same | Keiichiro Fujita, Kikurou Takemoto, Masato Matsushima, Hideki Matsubara, Shigenori Takagishi +2 more | 1998-12-01 |
| 5834325 | Light emitting device, wafer for light emitting device, and method of preparing the same | Kensaku Motoki, Mitsuru Shimazu | 1998-11-10 |
| 5756374 | Compound semiconductor light emitting device and method of preparing the same | Hideki Matsubara, Masato Matsushima, Hisashi Seki, Akinori Koukitu | 1998-05-26 |
| 5665986 | Compound semiconductor light emitting device and method of preparing the same | Hideki Matsubara, Masato Matsushima, Hisashi Seki, Akinori Koukitu | 1997-09-09 |
| 5212394 | Compound semiconductor wafer with defects propagating prevention means | Takashi Iwasaki, Naoyuki Yamabayashi | 1993-05-18 |