Issued Patents All Time
Showing 1–25 of 32 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11982016 | Method for growing beta-Ga2O3-based single crystal film, and crystalline layered structure | Ken-Ichi Goto, Kohei Sasaki, Yoshinao Kumagai, Hisashi Murakami | 2024-05-14 |
| 11499247 | Vapor-liquid reaction device, reaction tube, film forming apparatus | Hisashi Murakami, Akira Yamaguchi, Kazushige Shiina, Hayato Shimamura | 2022-11-15 |
| 11371140 | Method for producing GaN crystal | Kenji Iso, Hisashi Murakami | 2022-06-28 |
| 11047067 | Crystal laminate structure | Ken-Ichi Goto, Yoshinao Kumagai, Hisashi Murakami | 2021-06-29 |
| 10961619 | Method for producing GaN crystal | Kenji Iso, Hisashi Murakami | 2021-03-30 |
| 10861945 | Semiconductor element and crystalline laminate structure | Kohei Sasaki, Ken-Ichi Goto, Masataka Higashiwaki, Man Hoi Wong, Yoshinao Kumagai +1 more | 2020-12-08 |
| 10676841 | Semiconductor substrate, epitaxial wafer, and method for manufacturing epitaxial wafer | Ken-Ichi Goto, Yoshinao Kumagai, Hisashi Murakami | 2020-06-09 |
| 10538862 | Crystal laminate structure | Ken-Ichi Goto, Yoshinao Kumagai, Hisashi Murakami | 2020-01-21 |
| 10199512 | High voltage withstand Ga2O3-based single crystal schottky barrier diode | Kohei Sasaki, Ken-Ichi Goto, Masataka Higashiwaki, Yoshinao Kumagai, Hisashi Murakami | 2019-02-05 |
| 10125433 | Nitride semiconductor crystal, manufacturing method and manufacturing equipment | Yoshinao Kumagai, Hisashi Murakami | 2018-11-13 |
| 10011921 | Method for producing group III element nitride crystal, group III element nitride crystal, semiconductor device, method for producing semiconductor device, and group III element nitride crystal production device | Yusuke Mori, Masashi Yoshimura, Mamoru Imade, Masashi ISEMURA | 2018-07-03 |
| 9978904 | Indium gallium nitride light emitting devices | Michael R. Krames, Mark P. D'Evelyn, Yoshinao Kumagai, Hisashi Murakami | 2018-05-22 |
| 9840790 | Highly transparent aluminum nitride single crystalline layers and devices made therefrom | Yoshinao Kumagai, Toru Nagashima, Toru Kinoshita, Yuki Kubota, Rafael Dalmau +4 more | 2017-12-12 |
| 9691942 | Single-cystalline aluminum nitride substrate and a manufacturing method thereof | Yoshinao Kumagai, Toru Nagashima, Yuki Hiraren | 2017-06-27 |
| 9611545 | ZnO film production system and production method using ZnO film production system having heating units and control device | Song yun Kang, Yoshinao Kumagai | 2017-04-04 |
| 9281180 | Method for producing gallium trichloride gas and method for producing nitride semiconductor crystal | Yoshinao Kumagai | 2016-03-08 |
| 8926752 | Method of producing a group III nitride crystal | Yoshinao Kumagai, Toru Nagashima, Kazuya Takada, Hiroyuki Yanagi | 2015-01-06 |
| 8822263 | Epitaxial growth method of a zinc oxide based semiconductor layer, epitaxial crystal structure, epitaxial crystal growth apparatus, and semiconductor device | Yoshinao Kumagai, Tetsuo Fujii, Naoki Yoshii | 2014-09-02 |
| 8129208 | n-Type conductive aluminum nitride semiconductor crystal and manufacturing method thereof | Yoshinao Kumagai, Toru Nagashima, Kazuya Takada, Hiroyuki Yanagi | 2012-03-06 |
| 7915149 | Gallium nitride substrate and gallium nitride layer formation method | Seiji Nakahata, Fumitaka Sato, Yoshiki Miura, Yoshinao Kumagai | 2011-03-29 |
| 7843040 | Gallium nitride baseplate and epitaxial substrate | Yoshinao Kumagai, Yoshiki Miura, Kikurou Takemoto, Fumitaka Sato | 2010-11-30 |
| 7645340 | Vapor phase growth method for A1-containing III-V group compound semiconductor, and method and device for producing A1-containing III-V group compound semiconductor | Yoshinao Kumagai, Tomohiro Marui | 2010-01-12 |
| 7621999 | Method and apparatus for AlGan vapor phase growth | Yoshinao Kumagai | 2009-11-24 |
| 7518216 | Gallium nitride baseplate, epitaxial substrate, and method of forming gallium nitride | Yoshinao Kumagai, Yoshiki Miura, Kikurou Takemoto, Fumitaka Sato | 2009-04-14 |
| 6387722 | Methods for preparing an epitaxial wafer having a gallium nitride epitaxial layer deposited on a semiconductor substrate | Kensaku Motoki, Masato Matsushima, Katsushi Akita, Mitsuru Shimazu, Kikurou Takemoto +1 more | 2002-05-14 |