Issued Patents All Time
Showing 1–25 of 34 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12230500 | Method of manufacturing a beta-Ga2O3-based single crystal film by flowing a Ga chloride gas, an oxygen gas, and a dopant gas | Quang Tu Thieu | 2025-02-18 |
| 12104276 | Ga2O3-based single crystal substrate | — | 2024-10-01 |
| 12087856 | Field effect transistor | — | 2024-09-10 |
| 11982016 | Method for growing beta-Ga2O3-based single crystal film, and crystalline layered structure | Ken-Ichi Goto, Akinori Koukitu, Yoshinao Kumagai, Hisashi Murakami | 2024-05-14 |
| 11923464 | Schottky barrier diode | Daiki Wakimoto, Yuki Koishikawa, Quang Tu Thieu | 2024-03-05 |
| 11626522 | Schottky barrier diode | Jun Arima, Jun Hirabayashi, Minoru Fujita | 2023-04-11 |
| 11621357 | Schottky barrier diode | Jun Arima, Minoru Fujita, Jun Hirabayashi | 2023-04-04 |
| 11616138 | Field effect transistor | — | 2023-03-28 |
| 11563092 | GA2O3-based semiconductor device | Masataka Higashiwaki, Yoshiaki Nakata, Takafumi Kamimura, Man Hoi Wong, Daiki Wakimoto | 2023-01-24 |
| 11557681 | Schottky barrier diode | Jun Arima, Minoru Fujita, Jun Hirabayashi | 2023-01-17 |
| 11469334 | Schottky barrier diode | Jun Arima, Minoru Fujita, Jun Hirabayashi | 2022-10-11 |
| 11456388 | Trench MOS schottky diode and method for producing same | Minoru Fujita, Jun Hirabayashi, Jun Arima | 2022-09-27 |
| 11355594 | Diode | — | 2022-06-07 |
| 11264241 | Semiconductor substrate, semiconductor element and method for producing semiconductor substrate | Akito Kuramata, Shinya Watanabe, Kuniaki Yagi, Naoki Hatta, Masataka Higashiwaki +1 more | 2022-03-01 |
| 11081598 | Trench MOS Schottky diode | Masataka Higashiwaki | 2021-08-03 |
| 11043602 | Schottky barrier diode | Daiki Wakimoto, Yuki Koishikawa, Quang Tu Thieu | 2021-06-22 |
| 10861945 | Semiconductor element and crystalline laminate structure | Ken-Ichi Goto, Masataka Higashiwaki, Man Hoi Wong, Akinori Koukitu, Yoshinao Kumagai +1 more | 2020-12-08 |
| 10825935 | Trench MOS-type Schottky diode | Masataka Higashiwaki | 2020-11-03 |
| 10633761 | GA2O3-based single crystal substrate, and production method therefor | — | 2020-04-28 |
| 10358742 | Ga2O3-based crystal film, and crystal multilayer structure | Daiki Wakimoto | 2019-07-23 |
| 10249767 | Ga2O3-based semiconductor element | Masataka Higashiwaki | 2019-04-02 |
| 10230007 | Semiconductor element, method for manufacturing same, semiconductor substrate, and crystal laminate structure | Akito Kuramata, Masataka Higashiwaki | 2019-03-12 |
| 10199512 | High voltage withstand Ga2O3-based single crystal schottky barrier diode | Ken-Ichi Goto, Masataka Higashiwaki, Akinori Koukitu, Yoshinao Kumagai, Hisashi Murakami | 2019-02-05 |
| 10161058 | Ga2O3-based single crystal substrate, and production method therefor | — | 2018-12-25 |
| 9716004 | Crystal laminate structure and method for producing same | — | 2017-07-25 |