Issued Patents All Time
Showing 1–23 of 23 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11982016 | Method for growing beta-Ga2O3-based single crystal film, and crystalline layered structure | Ken-Ichi Goto, Kohei Sasaki, Akinori Koukitu, Hisashi Murakami | 2024-05-14 |
| 11047067 | Crystal laminate structure | Ken-Ichi Goto, Akinori Koukitu, Hisashi Murakami | 2021-06-29 |
| 10985016 | Semiconductor substrate, and epitaxial wafer and method for producing same | Ken-Ichi Goto, Hisashi Murakami | 2021-04-20 |
| 10861945 | Semiconductor element and crystalline laminate structure | Kohei Sasaki, Ken-Ichi Goto, Masataka Higashiwaki, Man Hoi Wong, Akinori Koukitu +1 more | 2020-12-08 |
| 10731274 | Group III nitride laminate and vertical semiconductor device having the laminate | Hisashi Murakami, Toru Kinoshita | 2020-08-04 |
| 10676841 | Semiconductor substrate, epitaxial wafer, and method for manufacturing epitaxial wafer | Ken-Ichi Goto, Akinori Koukitu, Hisashi Murakami | 2020-06-09 |
| 10538862 | Crystal laminate structure | Ken-Ichi Goto, Akinori Koukitu, Hisashi Murakami | 2020-01-21 |
| 10199512 | High voltage withstand Ga2O3-based single crystal schottky barrier diode | Kohei Sasaki, Ken-Ichi Goto, Masataka Higashiwaki, Akinori Koukitu, Hisashi Murakami | 2019-02-05 |
| 10125433 | Nitride semiconductor crystal, manufacturing method and manufacturing equipment | Akinori Koukitu, Hisashi Murakami | 2018-11-13 |
| 9978904 | Indium gallium nitride light emitting devices | Michael R. Krames, Mark P. D'Evelyn, Akinori Koukitu, Hisashi Murakami | 2018-05-22 |
| 9840790 | Highly transparent aluminum nitride single crystalline layers and devices made therefrom | Akinori Koukitu, Toru Nagashima, Toru Kinoshita, Yuki Kubota, Rafael Dalmau +4 more | 2017-12-12 |
| 9708733 | Method for manufacturing aluminum-based group III nitride single crystal by hydride vapor phase epitaxy | Akinori Koukitsu, Toru Nagashima, Reiko Okayama | 2017-07-18 |
| 9691942 | Single-cystalline aluminum nitride substrate and a manufacturing method thereof | Akinori Koukitu, Toru Nagashima, Yuki Hiraren | 2017-06-27 |
| 9611545 | ZnO film production system and production method using ZnO film production system having heating units and control device | Song yun Kang, Akinori Koukitu | 2017-04-04 |
| 9281180 | Method for producing gallium trichloride gas and method for producing nitride semiconductor crystal | Akinori Koukitu | 2016-03-08 |
| 8926752 | Method of producing a group III nitride crystal | Akinori Koukitu, Toru Nagashima, Kazuya Takada, Hiroyuki Yanagi | 2015-01-06 |
| 8822263 | Epitaxial growth method of a zinc oxide based semiconductor layer, epitaxial crystal structure, epitaxial crystal growth apparatus, and semiconductor device | Akinori Koukitu, Tetsuo Fujii, Naoki Yoshii | 2014-09-02 |
| 8129208 | n-Type conductive aluminum nitride semiconductor crystal and manufacturing method thereof | Akinori Koukitu, Toru Nagashima, Kazuya Takada, Hiroyuki Yanagi | 2012-03-06 |
| 7915149 | Gallium nitride substrate and gallium nitride layer formation method | Seiji Nakahata, Fumitaka Sato, Yoshiki Miura, Akinori Koukitu | 2011-03-29 |
| 7843040 | Gallium nitride baseplate and epitaxial substrate | Akinori Koukitu, Yoshiki Miura, Kikurou Takemoto, Fumitaka Sato | 2010-11-30 |
| 7645340 | Vapor phase growth method for A1-containing III-V group compound semiconductor, and method and device for producing A1-containing III-V group compound semiconductor | Akinori Koukitu, Tomohiro Marui | 2010-01-12 |
| 7621999 | Method and apparatus for AlGan vapor phase growth | Akinori Koukitu | 2009-11-24 |
| 7518216 | Gallium nitride baseplate, epitaxial substrate, and method of forming gallium nitride | Akinori Koukitu, Yoshiki Miura, Kikurou Takemoto, Fumitaka Sato | 2009-04-14 |