TN

Toru Nagashima

TO Tokuyama: 14 patents #11 of 562Top 2%
KC Koito Manufacturing Co.: 6 patents #191 of 1,047Top 20%
TT Tokyo University Of Agriculture And Technology: 2 patents #3 of 46Top 7%
BV Brightway Vision: 1 patents #15 of 22Top 70%
HE Hexatech: 1 patents #7 of 13Top 55%
Overall (All Time): #216,294 of 4,157,543Top 6%
20
Patents All Time

Issued Patents All Time

Showing 1–20 of 20 patents

Patent #TitleCo-InventorsDate
12379497 Object identification system Kensuke Arai, Koji ITABA, Jun Kano 2025-08-05
12116697 Group III nitride single crystal substrate and method for production thereof 2024-10-15
12105204 Sensor system Shuki Yamamoto 2024-10-01
12077187 Sensing system and vehicle Shuki Yamamoto, Misako Kamiya, Shunsuke Okamura 2024-09-03
11841435 Object identification system 2023-12-12
11767612 Group III nitride single crystal substrate Masayuki Fukuda 2023-09-26
11754714 Recognition sensor and control method thereof, automobile, automotive lamp, object recognition system, and object recognition method 2023-09-12
11554792 Sensing system and vehicle Shuki Yamamoto, Misako Kamiya, Shunsuke Okamura 2023-01-17
11348785 Apparatus for manufacturing group III nitride single crystal, method for manufacturing group III nitride single crystal using the apparatus, and aluminum nitride single crystal Masayuki Fukuda 2022-05-31
10822718 Method for producing aluminum nitride single crystal substrate Reiko Okayama, Masayuki Fukuda, Hiroyuki Yanagi 2020-11-03
10354862 Apparatus for manufacturing group III nitride single crystal, method for manufacturing group III nitride single crystal using the apparatus, and aluminum nitride single crystal Masayuki Fukuda 2019-07-16
9840790 Highly transparent aluminum nitride single crystalline layers and devices made therefrom Akinori Koukitu, Yoshinao Kumagai, Toru Kinoshita, Yuki Kubota, Rafael Dalmau +4 more 2017-12-12
9806205 N-type aluminum nitride monocrystalline substrate Toru Kinoshita 2017-10-31
9748410 N-type aluminum nitride single-crystal substrate and vertical nitride semiconductor device Toru Kinoshita, Toshiyuki Obata 2017-08-29
9708733 Method for manufacturing aluminum-based group III nitride single crystal by hydride vapor phase epitaxy Akinori Koukitsu, Yoshinao Kumagai, Reiko Okayama 2017-07-18
9691942 Single-cystalline aluminum nitride substrate and a manufacturing method thereof Akinori Koukitu, Yoshinao Kumagai, Yuki Hiraren 2017-06-27
9145621 Production method of an aluminum based group III nitride single crystal Keiichiro Hironaka 2015-09-29
8926752 Method of producing a group III nitride crystal Akinori Koukitu, Yoshinao Kumagai, Kazuya Takada, Hiroyuki Yanagi 2015-01-06
8129208 n-Type conductive aluminum nitride semiconductor crystal and manufacturing method thereof Akinori Koukitu, Yoshinao Kumagai, Kazuya Takada, Hiroyuki Yanagi 2012-03-06
7947577 Method and apparatus for producing group III nitride Kazuya Takada, Hiroyuki Yanagi, Manabu Harada, Yasunori Hirata, Keisuke Kondo 2011-05-24