Issued Patents All Time
Showing 1–13 of 13 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11563092 | GA2O3-based semiconductor device | Yoshiaki Nakata, Takafumi Kamimura, Man Hoi Wong, Kohei Sasaki, Daiki Wakimoto | 2023-01-24 |
| 11264241 | Semiconductor substrate, semiconductor element and method for producing semiconductor substrate | Akito Kuramata, Shinya Watanabe, Kohei Sasaki, Kuniaki Yagi, Naoki Hatta +1 more | 2022-03-01 |
| 11081598 | Trench MOS Schottky diode | Kohei Sasaki | 2021-08-03 |
| 10861945 | Semiconductor element and crystalline laminate structure | Kohei Sasaki, Ken-Ichi Goto, Man Hoi Wong, Akinori Koukitu, Yoshinao Kumagai +1 more | 2020-12-08 |
| 10825935 | Trench MOS-type Schottky diode | Kohei Sasaki | 2020-11-03 |
| 10249767 | Ga2O3-based semiconductor element | Kohei Sasaki | 2019-04-02 |
| 10230007 | Semiconductor element, method for manufacturing same, semiconductor substrate, and crystal laminate structure | Kohei Sasaki, Akito Kuramata | 2019-03-12 |
| 10199512 | High voltage withstand Ga2O3-based single crystal schottky barrier diode | Kohei Sasaki, Ken-Ichi Goto, Akinori Koukitu, Yoshinao Kumagai, Hisashi Murakami | 2019-02-05 |
| 9611567 | Method for controlling donor concentration in Ga2O3-based and method for forming ohmic contact | Kohei Sasaki | 2017-04-04 |
| 9461124 | Ga2O3 semiconductor element | Kohei Sasaki | 2016-10-04 |
| 9437689 | Ga2O3 semiconductor element | Kohei Sasaki | 2016-09-06 |
| 9245749 | Method of forming Ga2O3-based crystal film and crystal multilayer structure | Kohei Sasaki | 2016-01-26 |
| 7547911 | Gan-based field effect transistor and production method therefor | — | 2009-06-16 |