Issued Patents All Time
Showing 26–34 of 34 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9685515 | Substrate for epitaxial growth, and crystal laminate structure | — | 2017-06-20 |
| 9657410 | Method for producing Ga2O3 based crystal film | — | 2017-05-23 |
| 9611567 | Method for controlling donor concentration in Ga2O3-based and method for forming ohmic contact | Masataka Higashiwaki | 2017-04-04 |
| 9461124 | Ga2O3 semiconductor element | Masataka Higashiwaki | 2016-10-04 |
| 9437689 | Ga2O3 semiconductor element | Masataka Higashiwaki | 2016-09-06 |
| 9245749 | Method of forming Ga2O3-based crystal film and crystal multilayer structure | Masataka Higashiwaki | 2016-01-26 |
| 9202876 | Method for controlling concentration of donor in GA2O3-based single crystal | — | 2015-12-01 |
| 9142623 | Substrate for epitaxial growth, and crystal laminate structure | — | 2015-09-22 |
| 8951897 | Method for controlling concentration of donor in GA2O3—based single crystal | — | 2015-02-10 |