Issued Patents All Time
Showing 1–19 of 19 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12351943 | n-Type GaN crystal, GaN wafer, and GaN crystal, GaN wafer and nitride semiconductor device production method | Tatsuya Takahashi, Tae Mochizuki, Yuuki ENATSU | 2025-07-08 |
| 12288686 | GaN substrate wafer and method for manufacturing same | Yuuki ENATSU, Kenji Shimoyama | 2025-04-29 |
| 11987903 | N-type GaN crystal, GaN wafer, and GaN crystal, GaN wafer and nitride semiconductor device production method | Tatsuya Takahashi, Tae Mochizuki, Yuuki ENATSU | 2024-05-21 |
| 11371140 | Method for producing GaN crystal | Akinori Koukitu, Hisashi Murakami | 2022-06-28 |
| 10961619 | Method for producing GaN crystal | Akinori Koukitu, Hisashi Murakami | 2021-03-30 |
| 10224201 | C-plane GaN substrate | Yuuki ENATSU, Hiromitsu Kimura | 2019-03-05 |
| 10177217 | C-plane GaN substrate | Hiromitsu Kimura, Yuya SAITO, Yuuki ENATSU | 2019-01-08 |
| 9828695 | Planar nonpolar group-III nitride films grown on miscut substrates | Asako Hirai, Zhongyuan Jia, Makoto Saito, Hisashi Yamada, Steven P. DenBaars +2 more | 2017-11-28 |
| 9340899 | Planar nonpolar group-III nitride films grown on miscut substrates | Asako Hirai, Zhongyuan Jia, Makoto Saito, Hisashi Yamada, Steven P. DenBaars +2 more | 2016-05-17 |
| 8791000 | Planar nonpolar group-III nitride films grown on miscut substrates | Asako Hirai, Zhongyuan Jia, Makoto Saito, Hisashi Yamada, Steven P. DenBaars +2 more | 2014-07-29 |
| 8691671 | Planar nonpolar group-III nitride films grown on miscut substrates | Asako Hirai, Zhongyuan Jia, Makoto Saito, Hisashi Yamada, Steven P. DenBaars +2 more | 2014-04-08 |
| 8679254 | Vapor phase epitaxy apparatus of group III nitride semiconductor | Yoshiyasu Ishihama, Ryohei Takaki, Yuzuru Takahashi | 2014-03-25 |
| 8642993 | Nonpolar III-nitride light emitting diodes with long wavelength emission | Hisashi Yamada, Shuji Nakamura | 2014-02-04 |
| 8368109 | Light emitting diodes with a p-type surface bonded to a transparent submount to increase light extraction efficiency | Hirokuni Asamizu, Makoto Saito, Hitoshi Sato, Steven P. DenBaars, Shuji Nakamura | 2013-02-05 |
| 8278128 | Enhancement of optical polarization of nitride light-emitting diodes by wafer off-axis cut | Hisashi Masui, Hisashi Yamada, Asako Hirai, Makoto Saito, James S. Speck +2 more | 2012-10-02 |
| 8158497 | Planar nonpolar m-plane group III nitride films grown on miscut substrates | Asako Hirai, Zhongyuan Jia, Makoto Saito, Hisashi Yamada, Steven P. DenBaars +2 more | 2012-04-17 |
| 8124991 | Light emitting diodes with a P-type surface bonded to a transparent submount to increase light extraction efficiency | Hirokuni Asamizu, Makoto Saito, Hitoshi Sato, Steven P. DenBaars, Shuji Nakamura | 2012-02-28 |
| 8044417 | Enhancement of optical polarization of nitride light-emitting diodes by increased indium incorporation | Hisashi Masui, Hisashi Yamada, James S. Speck, Shuji Nakamura, Steven P. DenBaars | 2011-10-25 |
| 7847280 | Nonpolar III-nitride light emitting diodes with long wavelength emission | Hisashi Yamada, Shuji Nakamura | 2010-12-07 |