Issued Patents All Time
Showing 1–25 of 61 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9618190 | LED module including flexible printed circuit board with adhesive layers and LED lighting fixture | Yoshihiro Akahane, Hirohisa Saito, Manabu Shiozaki | 2017-04-11 |
| 9305776 | Oxygen-doped gallium nitride crystal substrate | Masaki Ueno | 2016-04-05 |
| 8933538 | Oxygen-doped gallium nitride single crystal substrate | Masaki Ueno | 2015-01-13 |
| 8679955 | Method for forming epitaxial wafer and method for fabricating semiconductor device | Shin Hashimoto, Katsushi Akita, Hideaki Nakahata, Shinsuke Fujiwara | 2014-03-25 |
| 8633093 | Oxygen doping method to gallium nitride single crystal substrate | Masaki Ueno | 2014-01-21 |
| 8592289 | Epitaxial wafer, method for manufacturing gallium nitride semiconductor device, gallium nitride semiconductor device and gallium oxide wafer | Shin Hashimoto, Katsushi Akita, Shinsuke Fujiwara, Hideaki Nakahata | 2013-11-26 |
| 8502238 | Nitride-composite semiconductor laser element, its manufacturing method, and semiconductor optical device | Shigetoshi Ito, Takayuki Yuasa, Yoshihiro Ueta, Mototaka Taneya, Zenpei Tani | 2013-08-06 |
| 8415180 | Method for fabricating wafer product and method for fabricating gallium nitride based semiconductor optical device | Shin Hashimoto, Katsushi Akita, Shinsuke Fujiwara, Hideaki Nakahata | 2013-04-09 |
| 8404569 | Fabrication method and fabrication apparatus of group III nitride crystal substance | Hitoshi Kasai, Takuji Okahisa, Shunsuke Fujita, Naoki Matsumoto, Hideyuki Ijiri +4 more | 2013-03-26 |
| 8334544 | Nitride semiconductor laser device including growth-inhibiting film at dislocation concentrated region | Shigetoshi Ito, Takayuki Yuasa, Yoshihiro Ueta, Mototaka Taneya, Zenpei Tani | 2012-12-18 |
| 8198177 | AlxInyGal-x-yN mixture crystal substrate, method of growing same and method of producing same | Seiji Nakahata, Ryu Hirota, Takuji Okahisa, Kouji Uematsu | 2012-06-12 |
| 8067300 | AlxInyGa1-x-yN mixture crystal substrate, method of growing same and method of producing same | Seiji Nakahata, Ryu Hirota, Takuji Okahisa, Kouji Uematsu | 2011-11-29 |
| 7968864 | Group-III nitride light-emitting device | Katsushi Akita, Hitoshi Kasai, Takashi Kyono | 2011-06-28 |
| 7928447 | GaN crystal substrate, fabricating method of GaN crystal substrate, and light-emitting device | Toru Matsuoka | 2011-04-19 |
| 7919831 | Nitride semiconductor device having oxygen-doped N-type gallium nitride freestanding single crystal substrate | Masaki Ueno | 2011-04-05 |
| 7915635 | Semiconductor light-emitting element and substrate used in formation of the same | Katsushi Akita, Hitoshi Kasai, Yoshiki Miura | 2011-03-29 |
| 7903710 | Nitride semiconductor light-emitting device | Takeshi Kamikawa, Yoshika Kaneko | 2011-03-08 |
| 7903707 | Nitride semiconductor light-emitting device | Takeshi Kamikawa, Yoshika Kaneko | 2011-03-08 |
| 7893454 | Method for producing structured substrate, structured substrate, method for producing semiconductor light emitting device, semiconductor light emitting device, method for producing semiconductor device, semiconductor device, method for producing device, and device | Toshimasa Kobayashi | 2011-02-22 |
| 7858502 | Fabrication method and fabrication apparatus of group III nitride crystal substance | Hitoshi Kasai, Takuji Okahisa, Shunsuke Fujita, Naoki Matsumoto, Hideyuki Ijiri +4 more | 2010-12-28 |
| 7858992 | Nitride semiconductor light-emitting device, method of fabricating it, and semiconductor optical apparatus | Yoshihiro Ueta, Teruyoshi Takakura, Takeshi Kamikawa, Yuhzoh Tsuda, Shigetoshi Ito +2 more | 2010-12-28 |
| 7794543 | Method of growing GaN crystal, method of producing single crystal GaN substrate, and single crystal GaN substrate | Ryu Hirota, Takuji Okahisa, Seiji Nakahata | 2010-09-14 |
| 7781244 | Method of manufacturing nitride-composite semiconductor laser element, with disclocation control | Shigetoshi Ito, Takayuki Yuasa, Yoshihiro Ueta, Mototaka Taneya, Zenpei Tani | 2010-08-24 |
| 7692200 | Nitride semiconductor light-emitting device | Takeshi Kamikawa, Yoshika Kaneko | 2010-04-06 |
| 7667298 | Oxygen-doped n-type gallium nitride freestanding single crystal substrate | Masaki Ueno | 2010-02-23 |