Issued Patents All Time
Showing 51–61 of 61 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 6667184 | Single crystal GaN substrate, method of growing same and method of producing same | Takuji Okahisa, Seiji Nakahata, Ryu Hirota, Koji Uematsu | 2003-12-23 |
| 6509651 | Substrate-fluorescent LED | Hideki Matsubara, Toshihiko Takebe | 2003-01-21 |
| 6468347 | Method of growing single crystal GaN, method of making single crystal GaN substrate and single crystal GaN substrate | Takuji Okahisa, Naoki Matsumoto | 2002-10-22 |
| 6468882 | Method of producing a single crystal gallium nitride substrate and single crystal gallium nitride substrate | Hitoshi Kasai, Takuji Okahisa | 2002-10-22 |
| 6413627 | GaN single crystal substrate and method of producing same | Takuji Okahisa, Naoki Matsumoto, Tatsuya Nishimoto | 2002-07-02 |
| 6387722 | Methods for preparing an epitaxial wafer having a gallium nitride epitaxial layer deposited on a semiconductor substrate | Masato Matsushima, Katsushi Akita, Mitsuru Shimazu, Kikurou Takemoto, Hisashi Seki +1 more | 2002-05-14 |
| 6270587 | Epitaxial wafer having a gallium nitride epitaxial layer deposited on semiconductor substrate and method for preparing the same | Masato Matsushima, Katsushi Akita, Mitsuru Shimazu, Kikurou Takemoto, Hisashi Seki +1 more | 2001-08-07 |
| 6031252 | Epitaxial wafer and method of preparing the same | Yoshiki Miura, Mitsuru Shimazu, Takuji Okahisa, Masato Matsushima, Hisashi Seki +1 more | 2000-02-29 |
| 5970314 | Process for vapor phase epitaxy of compound semiconductor | Takuji Okahisa, Mitsuru Shimazu, Masato Matsushima, Yoshiki Miura, Hisashi Seki +1 more | 1999-10-19 |
| 5962875 | Light emitting device, wafer for light emitting device, and method of preparing the same | Mitsuru Shimazu, Yoshiki Miura | 1999-10-05 |
| 5834325 | Light emitting device, wafer for light emitting device, and method of preparing the same | Mitsuru Shimazu, Yoshiki Miura | 1998-11-10 |