Issued Patents All Time
Showing 26–50 of 61 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 7655960 | A1xInyGa1-x-yN mixture crystal substrate, method of growing same and method of producing same | Seiji Nakahata, Ryu Hirota, Takuji Okahisa, Kouji Uematsu | 2010-02-02 |
| 7622318 | Method for producing structured substrate, structured substrate, method for producing semiconductor light emitting device, semiconductor light emitting device, method for producing semiconductor device, semiconductor device, method for producing device, and device | Toshimasa Kobayashi | 2009-11-24 |
| 7589000 | Fabrication method and fabrication apparatus of group III nitride crystal substance | Hitoshi Kasai, Takuji Okahisa, Shunsuke Fujita, Naoki Matsumoto, Hideyuki Ijiri +4 more | 2009-09-15 |
| 7579627 | Nitride semiconductor light-emitting device, method of fabricating it, and semiconductor optical apparatus | Yoshihiro Ueta, Teruyoshi Takakura, Takeshi Kamikawa, Yuhzoh Tsuda, Shigetoshi Ito +2 more | 2009-08-25 |
| 7534310 | Single crystal GaN substrate, method of growing single crystal GaN and method of producing single crystal GaN substrate | Ryu Hirota, Takuji Okahisa, Seiji Nakahata | 2009-05-19 |
| 7521339 | GaN single crystal substrate and method of making the same | Takuji Okahisa, Naoki Matsumoto | 2009-04-21 |
| 7504323 | GaN single crystal substrate and method of making the same | Takuji Okahisa, Naoki Matsumoto | 2009-03-17 |
| 7498608 | Nitride-composite semiconductor laser element, its manufacturing method, and semiconductor optical device | Shigetoshi Ito, Takayuki Yuasa, Yoshihiro Ueta, Mototaka Taneya, Zenpei Tani | 2009-03-03 |
| 7473315 | AlxInyGa1-x-yN mixture crystal substrate, method of growing AlxInyGa1-x-yN mixture crystal substrate and method of producing AlxInyGa1-x-yN mixture crystal substrate | Seiji Nakahata, Ryu Hirota, Takuji Okahisa, Koji Uematsu | 2009-01-06 |
| 7470970 | Oxygen-doped n-type gallium nitride freestanding single crystal substrate | Masaki Ueno | 2008-12-30 |
| 7462882 | Nitride semiconductor light-emitting device, method of fabricating it, and semiconductor optical apparatus | Yoshihiro Ueta, Teruyoshi Takakura, Takeshi Kamikawa, Yuhzoh Tsuda, Shigetoshi Ito +2 more | 2008-12-09 |
| 7357837 | GaN single crystal substrate and method of making the same | Takuji Okahisa, Naoki Matsumoto | 2008-04-15 |
| 7354477 | Method of growing GaN crystal, method of producing single crystal GaN substrate, and single crystal GaN substrate | Ryu Hirota, Takuji Okahisa, Seiji Nakahata | 2008-04-08 |
| 7327770 | Nitride semiconductor laser device | Tatsuya Ryowa, Masaya Ishida, Yukiko Morishita, Takeshi Kamikawa | 2008-02-05 |
| 7303630 | Method of growing GaN crystal, method of producing single crystal GaN substrate, and single crystal GaN substrate | Takuji Okahisa, Ryu Hirota, Seiji Nakahata, Koji Uematsu | 2007-12-04 |
| 7176499 | Method of manufacturing a semiconductor light emitting device, semiconductor light emitting device, method of manufacturing a semiconductor device, semiconductor device, method of manufacturing a device, and device | Tsunenori Asatsuma, Shigetaka Tomiya, Koshi Tamamura, Tsuyoshi Tojo, Osamu Goto | 2007-02-13 |
| 7112826 | Single crystal GaN substrate semiconductor device | Takuji Okahisa, Seiji Nakahata, Ryu Hirota, Koji Uematsu | 2006-09-26 |
| 7105865 | AlxInyGa1−x−yN mixture crystal substrate | Seiji Nakahata, Ryu Hirota, Takuji Okahisa, Kouji Uematsu | 2006-09-12 |
| 7091056 | Method of manufacturing a semiconductor light emitting device, semiconductor light emitting device, method of manufacturing a semiconductor device, semiconductor device, method of manufacturing a device, and device | Tsunenori Asatsuma, Shigetaka Tomiya, Koshi Tamamura, Tsuyoshi Tojo, Osamu Goto | 2006-08-15 |
| 7087114 | Single crystal GaN substrate, method of growing single crystal GaN and method of producing single crystal GaN substrate | Ryu Hirota, Takuji Okahisa, Seiji Nakahata | 2006-08-08 |
| 7015058 | Method for fabricating a group III nitride semiconductor laser device | Kunihiro Takatani, Shigetoshi Ito, Takayuki Yuasa, Mototaka Taneya | 2006-03-21 |
| 7012318 | Oxygen-doped n-type gallium nitride freestanding single crystal substrate | Masaki Ueno | 2006-03-14 |
| 6812496 | Group III nitride semiconductor laser device | Kunihiro Takatani, Shigetoshi Ito, Takayuki Yuasa, Mototaka Taneya | 2004-11-02 |
| 6773504 | Oxygen doping method to gallium nitride single crystal substrate and oxygen-doped N-type gallium nitride freestanding single crystal substrate | Masaki Ueno | 2004-08-10 |
| 6693021 | GaN single crystal substrate and method of making the same | Takuji Okahisa, Naoki Matsumoto | 2004-02-17 |