RH

Ryu Hirota

Sumitomo Electric Industries: 37 patents #315 of 21,551Top 2%
UN Unknown: 3 patents #7,366 of 83,584Top 9%
Overall (All Time): #90,236 of 4,157,543Top 3%
37
Patents All Time

Issued Patents All Time

Showing 25 most recent of 37 patents

Patent #TitleCo-InventorsDate
10837124 Gallium nitride substrate Makoto Kiyama, Seiji Nakahata 2020-11-17
10458043 Gallium nitride substrate Makoto Kiyama, Seiji Nakahata 2019-10-29
10443151 Gallium nitride substrate Makoto Kiyama, Seiji Nakahata 2019-10-15
10006147 Gallium nitride substrate Makoto Kiyama, Seiji Nakahata 2018-06-26
8404569 Fabrication method and fabrication apparatus of group III nitride crystal substance Hitoshi Kasai, Takuji Okahisa, Shunsuke Fujita, Naoki Matsumoto, Hideyuki Ijiri +4 more 2013-03-26
8310030 III-nitride crystal substrate and III-nitride semiconductor device Koji Uematsu, Tomohiro Kawase 2012-11-13
8304334 III-V compound crystal and semiconductor electronic circuit element Seiji Nakahata, Koji Uematsu 2012-11-06
8198177 AlxInyGal-x-yN mixture crystal substrate, method of growing same and method of producing same Seiji Nakahata, Kensaku Motoki, Takuji Okahisa, Kouji Uematsu 2012-06-12
8134223 III-V compound crystal and semiconductor electronic circuit element Seiji Nakahata, Koji Uematsu 2012-03-13
8067300 AlxInyGa1-x-yN mixture crystal substrate, method of growing same and method of producing same Seiji Nakahata, Kensaku Motoki, Takuji Okahisa, Kouji Uematsu 2011-11-29
8038794 Group III-nitride crystal, manufacturing method thereof, group III-nitride crystal substrate and semiconductor device Takatomo Sasaki, Yusuke Mori, Masashi Yoshimura, Fumio Kawamura, Seiji Nakahata 2011-10-18
8002892 Group III nitride crystal substrate, method of its manufacture, and group III nitride semiconductor device Seiji Nakahata, Masaki Ueno 2011-08-23
7998847 III-nitride crystal manufacturing method, III-nitride crystal substrate, and III-nitride semiconductor device Koji Uematsu, Tomohiro Kawase 2011-08-16
7905958 Group III-nitride semiconductor crystal and manufacturing method thereof, and group III-nitride semiconductor device Takatomo Sasaki, Yusuke Mori, Masashi Yoshimura, Fumio Kawamura, Seiji Nakahata 2011-03-15
7892513 Group III nitride crystal and method of its growth Shinsuke Fujiwara, Hiroaki Yoshida, Koji Uematsu, Haruko Tanaka 2011-02-22
7858502 Fabrication method and fabrication apparatus of group III nitride crystal substance Hitoshi Kasai, Takuji Okahisa, Shunsuke Fujita, Naoki Matsumoto, Hideyuki Ijiri +4 more 2010-12-28
7794543 Method of growing GaN crystal, method of producing single crystal GaN substrate, and single crystal GaN substrate Kensaku Motoki, Takuji Okahisa, Seiji Nakahata 2010-09-14
7771532 Nitride semiconductor substrate and method of producing same Koji Uematsu, Fumitaka Sato, Seiji Nakahata, Hideaki Nakahata 2010-08-10
7772585 Nitride semiconductor substrate and method of producing same Koji Uematsu, Fumitaka Sato, Seiji Nakahata, Hideaki Nakahata 2010-08-10
7655960 A1xInyGa1-x-yN mixture crystal substrate, method of growing same and method of producing same Seiji Nakahata, Kensaku Motoki, Takuji Okahisa, Kouji Uematsu 2010-02-02
7589000 Fabrication method and fabrication apparatus of group III nitride crystal substance Hitoshi Kasai, Takuji Okahisa, Shunsuke Fujita, Naoki Matsumoto, Hideyuki Ijiri +4 more 2009-09-15
7534310 Single crystal GaN substrate, method of growing single crystal GaN and method of producing single crystal GaN substrate Kensaku Motoki, Takuji Okahisa, Seiji Nakahata 2009-05-19
7485484 Group III-V crystal Seiji Nakahata, Koji Uematsu 2009-02-03
7473315 AlxInyGa1-x-yN mixture crystal substrate, method of growing AlxInyGa1-x-yN mixture crystal substrate and method of producing AlxInyGa1-x-yN mixture crystal substrate Seiji Nakahata, Kensaku Motoki, Takuji Okahisa, Koji Uematsu 2009-01-06
7354477 Method of growing GaN crystal, method of producing single crystal GaN substrate, and single crystal GaN substrate Kensaku Motoki, Takuji Okahisa, Seiji Nakahata 2008-04-08