Issued Patents All Time
Showing 1–25 of 61 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11242618 | Silicon carbide substrate and method of manufacturing the same | Shin Harada, Taro Nishiguchi | 2022-02-08 |
| 9631296 | Method of manufacturing silicon carbide substrate | Taro Nishiguchi, Tsutomu Hori, Naoki Ooi, Shunsaku UETA | 2017-04-25 |
| 9583571 | Dislocation in SiC semiconductor substrate | Taro Nishiguchi, Shin Harada | 2017-02-28 |
| 9450054 | Dislocation in SiC semiconductor substrate | Taro Nishiguchi, Shin Harada | 2016-09-20 |
| 9368568 | Group III nitride crystal substrates and group III nitride crystal | Koji Uematsu, Hideki Osada, Seiji Nakahata | 2016-06-14 |
| 9279194 | Method of growing III-nitride crystal | Hiroaki Yoshida, Koji Uematsu, Masanori Morishita | 2016-03-08 |
| 9255344 | Silicon carbide substrate and method of manufacturing the same | Shin Harada, Taro Nishiguchi | 2016-02-09 |
| 9153742 | GaN-crystal free-standing substrate and method for producing the same | Koji Uematsu, Hitoshi Kasai, Takuji Okahisa | 2015-10-06 |
| 9005362 | Method for growing group III nitride crystal | Yuki Hiromura, Koji Uematsu, Hiroaki Yoshida | 2015-04-14 |
| 8963166 | III nitride crystal substrate and light-emitting device | Hiroaki Yoshida | 2015-02-24 |
| 8962365 | Method of manufacturing GaN-based film and composite substrate used therefor | Issei Satoh, Yuki Seki, Koji Uematsu, Yoshiyuki Yamamoto, Hideki Matsubara +1 more | 2015-02-24 |
| 8937339 | Si(1-V-W-X)CWAlXNV substrate, and epitaxial wafer | Issei Satoh, Michimasa Miyanaga, Hideaki Nakahata | 2015-01-20 |
| 8912550 | Dislocations in SiC semiconductor substrate | Taro Nishiguchi, Shin Harada | 2014-12-16 |
| 8847363 | Method for producing group III nitride crystal | Koji Uematsu, Hideki Osada, Seiji Nakahata | 2014-09-30 |
| 8823142 | GaN single crystal substrate having a large area and a main surface whose plane orientation is other than (0001) and (000-1) | Koji Uematsu, Hideki Osada, Seiji Nakahata | 2014-09-02 |
| 8715414 | Process for producing Si(1-v-w-x)CwAlxNv base material, process for producing epitaxial wafer, Si(1-v-w-x)CwAlxNv base material, and epitaxial wafer | Issei Satoh, Michimasa Miyanaga, Hideaki Nakahata | 2014-05-06 |
| 8697564 | Method of manufacturing GaN-based film | Koji Uematsu, Yoshiyuki Yamamoto, Issei Satoh | 2014-04-15 |
| 8697550 | Method of manufacturing GaN-based film | Issei Satoh, Yuki Seki, Koji Uematsu, Yoshiyuki Yamamoto, Hideki Matsubara +1 more | 2014-04-15 |
| 8679955 | Method for forming epitaxial wafer and method for fabricating semiconductor device | Shin Hashimoto, Katsushi Akita, Kensaku Motoki, Hideaki Nakahata | 2014-03-25 |
| 8642154 | Silicon carbide crystal ingot, silicon carbide crystal wafer, and method for fabricating silicon carbide crystal ingot | Tsutomu Hori, Makoto Sasaki, Taro Nishiguchi | 2014-02-04 |
| 8642153 | Single crystal silicon carbide substrate and method of manufacturing the same | Tsutomu Hori, Makoto Sasaki, Taro Nishiguchi | 2014-02-04 |
| 8629457 | Light-emitting device | Taro Nishiguchi, Makoto Sasaki, Shin Harada, Kyoko Okita, Hiroki Inoue +1 more | 2014-01-14 |
| 8598685 | GaN single crystal substrate and method of manufacturing thereof and GaN-based semiconductor device and method of manufacturing thereof | Koji Uematsu, Hideki Osada, Seiji Nakahata | 2013-12-03 |
| 8592289 | Epitaxial wafer, method for manufacturing gallium nitride semiconductor device, gallium nitride semiconductor device and gallium oxide wafer | Shin Hashimoto, Katsushi Akita, Hideaki Nakahata, Kensaku Motoki | 2013-11-26 |
| 8586998 | Silicon carbide substrate manufacturing method and silicon carbide substrate | Hiroki Inoue, Keiji Ishibashi | 2013-11-19 |