KI

Keiji Ishibashi

Sumitomo Electric Industries: 63 patents #97 of 21,551Top 1%
AN Anelva: 6 patents #14 of 280Top 5%
Canon: 4 patents #10,118 of 19,416Top 55%
NE Nec: 2 patents #5,510 of 14,502Top 40%
A. A.L.M.T.: 1 patents #72 of 152Top 50%
JT Japan Science And Technology: 1 patents #225 of 836Top 30%
📍 Itami, JP: #13 of 1,436 inventorsTop 1%
Overall (All Time): #27,219 of 4,157,543Top 1%
73
Patents All Time

Issued Patents All Time

Showing 1–25 of 73 patents

Patent #TitleCo-InventorsDate
11094537 Group III nitride composite substrate and method for manufacturing the same, and method for manufacturing group III nitride semiconductor device Akihiro Hachigo, Yuki Hiromura, Naoki Matsumoto, Seiji Nakahata, Fumitake Nakanishi +6 more 2021-08-17
10844470 Epitaxial film forming method, sputtering apparatus, manufacturing method of semiconductor light-emitting element, semiconductor light-emitting element, and illumination device Yoshiaki DAIGO 2020-11-24
10600676 Group III nitride composite substrate and method for manufacturing the same, and method for manufacturing group III nitride semiconductor device Akihiro Hachigo, Yuki Hiromura, Naoki Matsumoto, Seiji Nakahata, Fumitake Nakanishi +6 more 2020-03-24
10186451 Group III nitride composite substrate and method for manufacturing the same, and method for manufacturing group III nitride semiconductor device Akihiro Hachigo, Naoki Matsumoto 2019-01-22
10113248 Group III nitride crystal substrate, epilayer-containing group III nitride crystal substrate, semiconductor device and method of manufacturing the same Yusuke Yoshizumi, Shugo Minobe 2018-10-30
10078059 Nitride crystal, nitride crystal substrate, epilayer-containing nitride crystal substrate, semiconductor device and method of manufacturing the same Tokiko Kaji, Seiji Nakahata, Takayuki Nishiura 2018-09-18
9923063 Group III nitride composite substrate and method for manufacturing the same, laminated group III nitride composite substrate, and group III nitride semiconductor device and method for manufacturing the same Takuya Yanagisawa, Koji Uematsu, Yuki Seki, Yoshiyuki Yamamoto 2018-03-20
9917004 Group III nitride composite substrate and method for manufacturing the same, and method for manufacturing group III nitride semiconductor device Akihiro Hachigo, Yuki Hiromura, Naoki Matsumoto, Seiji Nakahata, Fumitake Nakanishi +6 more 2018-03-13
9728612 Silicon carbide substrate, semiconductor device and methods for manufacturing them 2017-08-08
9722028 Silicon carbide substrate, semiconductor device, and methods for manufacturing them 2017-08-01
9708735 Group III nitride crystal substrate, epilayer-containing group III nitride crystal substrate, semiconductor device and method of manufacturing the same Yusuke Yoshizumi, Shugo Minobe 2017-07-18
9570540 Nitride crystal, nitride crystal substrate, epilayer-containing nitride crystal substrate, semiconductor device and method of manufacturing the same Tokiko Kaji, Seiji Nakahata, Takayuki Nishiura 2017-02-14
9499925 Group III nitride crystal substrate, epilayer-containing group III nitride crystal substrate, semiconductor device and method of manufacturing the same Yusuke Yoshizumi 2016-11-22
9490132 Substrate, semiconductor device, and method of manufacturing the same 2016-11-08
9484416 Silicon carbide substrate, semiconductor device and methods for manufacturing them 2016-11-01
9437690 Silicon carbide substrate, semiconductor device, and methods for manufacturing them 2016-09-06
9324814 Silicon carbide single-crystal substrate Kyoko Okita 2016-04-26
9318563 Silicon carbide single-crystal substrate Kyoko Okita 2016-04-19
9312165 Group III nitride composite substrate and method for manufacturing the same, and method for manufacturing group III nitride semiconductor device Akihiro Hachigo, Naoki Matsumoto 2016-04-12
9312340 Group III nitride composite substrate and method for manufacturing the same, laminated group III nitride composite substrate, and group III nitride semiconductor device and method for manufacturing the same Makoto Kiyama, Akihiro Hachigo, Naoki Matsumoto, Fumitake Nakanishi 2016-04-12
9299890 III nitride semiconductor substrate, epitaxial substrate, and semiconductor device 2016-03-29
9252322 Epitaxial film forming method, vacuum processing apparatus, semiconductor light emitting element manufacturing method, semiconductor light emitting element, and illuminating device Yoshiaki DAIGO 2016-02-02
9184246 Silicon carbide substrate, semiconductor device, and methods for manufacturing them 2015-11-10
9136337 Group III nitride composite substrate and method for manufacturing the same, laminated group III nitride composite substrate, and group III nitride semiconductor device and method for manufacturing the same Akihiro Hachigo, Yuki Hiromura, Naoki Matsumoto, Seiji Nakahata, Fumitake Nakanishi +2 more 2015-09-15
9117758 Substrate, semiconductor device, and method of manufacturing the same 2015-08-25