Issued Patents All Time
Showing 25 most recent of 82 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11421344 | Gallium nitride crystal substrate | Hideki Osada, Shugo Minobe, Yoshiaki Hagi | 2022-08-23 |
| 11094537 | Group III nitride composite substrate and method for manufacturing the same, and method for manufacturing group III nitride semiconductor device | Keiji Ishibashi, Akihiro Hachigo, Yuki Hiromura, Naoki Matsumoto, Seiji Nakahata +6 more | 2021-08-17 |
| 10600676 | Group III nitride composite substrate and method for manufacturing the same, and method for manufacturing group III nitride semiconductor device | Keiji Ishibashi, Akihiro Hachigo, Yuki Hiromura, Naoki Matsumoto, Seiji Nakahata +6 more | 2020-03-24 |
| 10158035 | Semiconductor stack, light-receiving device, and method for producing semiconductor stack | Takuma FUYUKI, Suguru Arikata, Takashi Kyono, Katsushi Akita | 2018-12-18 |
| 10113248 | Group III nitride crystal substrate, epilayer-containing group III nitride crystal substrate, semiconductor device and method of manufacturing the same | Keiji Ishibashi, Shugo Minobe | 2018-10-30 |
| 9917004 | Group III nitride composite substrate and method for manufacturing the same, and method for manufacturing group III nitride semiconductor device | Keiji Ishibashi, Akihiro Hachigo, Yuki Hiromura, Naoki Matsumoto, Seiji Nakahata +6 more | 2018-03-13 |
| 9825134 | Layered semiconductor having base layer including GaN substrate | Fuminori Mitsuhashi, Takashi Ishizuka, Masaki Ueno | 2017-11-21 |
| 9708735 | Group III nitride crystal substrate, epilayer-containing group III nitride crystal substrate, semiconductor device and method of manufacturing the same | Keiji Ishibashi, Shugo Minobe | 2017-07-18 |
| 9499925 | Group III nitride crystal substrate, epilayer-containing group III nitride crystal substrate, semiconductor device and method of manufacturing the same | Keiji Ishibashi | 2016-11-22 |
| 9231370 | Group III nitride semiconductor light emitting device | Takamichi Sumitomo, Takashi Kyono, Masaki Ueno, Yohei Enya, Masahiro Adachi +2 more | 2016-01-05 |
| 9136337 | Group III nitride composite substrate and method for manufacturing the same, laminated group III nitride composite substrate, and group III nitride semiconductor device and method for manufacturing the same | Keiji Ishibashi, Akihiro Hachigo, Yuki Hiromura, Naoki Matsumoto, Seiji Nakahata +2 more | 2015-09-15 |
| 8953656 | III-nitride semiconductor laser device and method for fabricating III-nitride semiconductor laser device | Takashi Kyono, Shimpei Takagi, Takamichi Sumitomo, Yohei Enya, Masaki Ueno +1 more | 2015-02-10 |
| 8929416 | Group-III nitride semiconductor laser device, and method for fabricating group-III nitride semiconductor laser device | Shimpei Takagi, Koji Katayama, Masaki Ueno, Takatoshi Ikegami | 2015-01-06 |
| 8927962 | Group III nitride semiconductor optical device | Masaki Ueno, Yohei Enya, Takashi Kyono, Katsushi Akita, Takamichi Sumitomo +2 more | 2015-01-06 |
| 8923354 | Nitride semiconductor laser, epitaxial substrate | Takashi Kyono, Yohei Enya, Takamichi Sumitomo, Masaki Ueno, Katsunori Yanashima +2 more | 2014-12-30 |
| 8917750 | III-nitride semiconductor laser diode | Masahiro Adachi, Shinji Tokuyama, Yohei Enya, Takashi Kyono, Katsushi Akita +4 more | 2014-12-23 |
| 8829545 | Group III nitride semiconductor light-emitting device | Masaki Ueno, Takashi Kyono | 2014-09-09 |
| 8815621 | Method of forming p-type gallium nitride based semiconductor, method of forming nitride semiconductor device, and method of forming epitaxial wafer | Masaki Ueno, Takao Nakamura | 2014-08-26 |
| 8809868 | Group-III nitride semiconductor device, method for fabricating Group-III nitride semiconductor device, and epitaxial substrate | Yohei Enya, Takashi Kyono, Takamichi Sumitomo, Koji Nishizuka | 2014-08-19 |
| 8803274 | Nitride-based semiconductor light-emitting element | Takashi Kyono, Yohei Enya, Katsushi Akita, Masaki Ueno, Takamichi Sumitomo +2 more | 2014-08-12 |
| 8772064 | Group-III nitride semiconductor laser device, and method of fabricating group-III nitride semiconductor laser device | Shimpei Takagi, Koji Katayama, Masaki Ueno, Takatoshi Ikegami | 2014-07-08 |
| 8771552 | Group III nitride crystal substrate, epilayer-containing group III nitride crystal substrate, semiconductor device and method of manufacturing the same | Keiji Ishibashi | 2014-07-08 |
| 8748868 | Nitride semiconductor light emitting device and epitaxial substrate | Takashi Kyono, Yohei Enya, Katsushi Akita, Masaki Ueno, Takamichi Sumitomo | 2014-06-10 |
| 8741674 | Group-III nitride semiconductor laser device, and method for fabricating group-III nitride semiconductor laser device | Shimpei Takagi, Yohei Enya, Takashi Kyono, Masahiro Adachi, Masaki Ueno +5 more | 2014-06-03 |
| 8718110 | Nitride semiconductor laser and epitaxial substrate | Takashi Kyono, Yohei Enya, Takamichi Sumitomo, Masaki Ueno, Katsunori Yanashima +2 more | 2014-05-06 |