Issued Patents All Time
Showing 51–73 of 73 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 7973322 | Nitride semiconductor light emitting device and method for forming the same | Katsushi Akita, Takashi Kyono, Hitoshi Kasai | 2011-07-05 |
| 7919343 | Group III nitride crystal and method for surface treatment thereof, group III nitride stack and manufacturing method thereof, and group III nitride semiconductor device and manufacturing method thereof | Naoki Matsumoto, Masato Irikura | 2011-04-05 |
| 7901960 | Group III nitride substrate, epitaxial layer-provided substrate, methods of manufacturing the same, and method of manufacturing semiconductor device | Akihiro Hachigo, Masato Irikura, Seiji Nakahata | 2011-03-08 |
| 7883775 | Diamond film coated tool and process for producing the same | Katsuo Kazahaya, Shigetaka Kawai, Yasushi Matsumoto, Takahiro Imai | 2011-02-08 |
| 7872331 | Nitride semiconductor wafer | Hidenori Mikami, Naoki Matsumoto | 2011-01-18 |
| 7863609 | Compound semiconductor substrate, semiconductor device, and processes for producing them | Fumitake Nakanishi | 2011-01-04 |
| 7854804 | Nitride crystal, nitride crystal substrate, epilayer-containing nitride crystal substrate, semiconductor device and method of manufacturing the same | Tokiko Kaji, Seiji Nakahata, Takayuki Nishiura | 2010-12-21 |
| 7851381 | Surface treatment method for nitride crystal, nitride crystal substrate, nitride crystal substrate with epitaxial layer and semiconductor device, and method of manufacturing nitride crystal substrate with epitaxial layer and semiconductor device | Takayuki Nishiura, Masato Irikura, Seiji Nakahata | 2010-12-14 |
| 7846810 | Method of measuring warpage of rear surface of substrate | Noriko Tanaka | 2010-12-07 |
| 7816238 | GaN substrate, substrate with epitaxial layer, semiconductor device, and method of manufacturing GaN substrate | Hideki Osada, Hitoshi Kasai, Seiji Nakahata, Takashi Kyono, Katsushi Akita +1 more | 2010-10-19 |
| 7771701 | Hydrogen atom generation source in vacuum treatment apparatus, and hydrogen atom transportation method | Hironobu Umemoto, Atsushi Masuda, Koji Yoneyama, Manabu Ikemoto | 2010-08-10 |
| 7662239 | Method of producing group 3 nitride substrate wafers and group 3 nitride substrate wafers | Masato Irikura, Seiji Nakahata | 2010-02-16 |
| 7507668 | Polishing slurry, method of treating surface of GaxIn1-xAsyP1-y crystal and GaxIn1-xAsyP1-y crystal substrate | Takayuki Nishiura | 2009-03-24 |
| 7494892 | Method of measuring warpage of rear surface of substrate | Noriko Tanaka | 2009-02-24 |
| 7416604 | Nitride crystal, nitride crystal substrate, epilayer-containing nitride crystal substrate, semiconductor device and method of manufacturing the same | Tokiko Kaji, Seiji Nakahata, Takayuki Nishiura | 2008-08-26 |
| 7387989 | AlxGayInl−x−yN substrate, cleaning method of AlxGayInl−x−yN substrate, AlN substrate, and cleaning method of AlN substrate | Tomoki Uemura, Shinsuke Fujiwara, Hideaki Nakahata | 2008-06-17 |
| 7211152 | Heating element CVD system and connection structure between heating element and electric power supply mechanism in the heating element CVD system | Masahiko Tanaka, Minoru Karasawa, Hideki Sunayama, Kazutaka Yamada, Hideki Matsumura +1 more | 2007-05-01 |
| 6955836 | Silicon oxide film formation method | Akira Kumagai, Shigeru Mori | 2005-10-18 |
| 6942892 | Hot element CVD apparatus and a method for removing a deposited film | — | 2005-09-13 |
| 6661152 | Diamond substrate for surface acoustic wave device, and surface acoustic wave device | Takahiro Imai, Tomoki Uemura, Daichi Kawaguchi, Hideaki Nakahata, Satoshi Fujii | 2003-12-09 |
| 6593548 | Heating element CVD system | Hideki Matsumura, Atsushi Masuda, Masahiko Tanaka, Minoru Karasawa | 2003-07-15 |
| 6375756 | Method for removing a deposited film | — | 2002-04-23 |
| 6365009 | Combined RF-DC magnetron sputtering method | — | 2002-04-02 |