Issued Patents All Time
Showing 1–24 of 24 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10078059 | Nitride crystal, nitride crystal substrate, epilayer-containing nitride crystal substrate, semiconductor device and method of manufacturing the same | Keiji Ishibashi, Tokiko Kaji, Seiji Nakahata | 2018-09-18 |
| 9691608 | Silicon carbide substrate, silicon carbide semiconductor device, and methods for manufacturing silicon carbide substrate and silicon carbide semiconductor device | So Tanaka, Shunsuke Yamada, Taku Horii, Akira Matsushima, Ryosuke Kubota +1 more | 2017-06-27 |
| 9570540 | Nitride crystal, nitride crystal substrate, epilayer-containing nitride crystal substrate, semiconductor device and method of manufacturing the same | Keiji Ishibashi, Tokiko Kaji, Seiji Nakahata | 2017-02-14 |
| 9035429 | Group III nitride crystal substrate | Keiji Ishibashi | 2015-05-19 |
| 9000567 | Compound semiconductor substrate | Kenichi Miyahara, Mitsutaka Tsubokura, Shinya Fujiwara | 2015-04-07 |
| 8841215 | Polishing agent, compound semiconductor manufacturing method, and semiconductor device manufacturing method | Keiji Ishibashi, Masashi Futamura | 2014-09-23 |
| 8828140 | Nitride crystal, nitride crystal substrate, epilayer-containing nitride crystal substrate, semiconductor device and method of manufacturing the same | Keiji Ishibashi, Tokiko Kaji, Seiji Nakahata | 2014-09-09 |
| 8381493 | Method of packaging compound semiconductor substrates | Yoshio Mezaki, Yoshiki Yabuhara | 2013-02-26 |
| 8338299 | Method of processing a surface of group III nitride crystal and group III nitride crystal substrate | Keiji Ishibashi | 2012-12-25 |
| 8192543 | Nitride crystal, nitride crystal substrate, epilayer-containing nitride crystal substrate, semiconductor device and method of manufacturing the same | Keiji Ishibashi, Tokiko Kaji, Seiji Nakahata | 2012-06-05 |
| 8177911 | Damage evaluation method of compound semiconductor member, production method of compound semiconductor member, gallium nitride compound semiconductor member and gallium nitride compound semiconductor membrane | Akihiro Hachigo | 2012-05-15 |
| 8133815 | Method of polishing compound semiconductor substrate, compound semiconductor substrate, method of manufacturing compound semiconductor epitaxial substrate, and compound semiconductor epitaxial substrate | Yoshio Mezaki, Masahiro Nakayama | 2012-03-13 |
| 8115927 | Production method of compound semiconductor member | Akihiro Hachigo, Keiji Ishibashi | 2012-02-14 |
| 8044493 | GaAs semiconductor substrate for group III-V compound semiconductor device | — | 2011-10-25 |
| 7960284 | III-V compound semiconductor substrate manufacturing method | Akihiro Hachigo, Naoki Matsumoto | 2011-06-14 |
| 7854804 | Nitride crystal, nitride crystal substrate, epilayer-containing nitride crystal substrate, semiconductor device and method of manufacturing the same | Keiji Ishibashi, Tokiko Kaji, Seiji Nakahata | 2010-12-21 |
| 7851381 | Surface treatment method for nitride crystal, nitride crystal substrate, nitride crystal substrate with epitaxial layer and semiconductor device, and method of manufacturing nitride crystal substrate with epitaxial layer and semiconductor device | Keiji Ishibashi, Masato Irikura, Seiji Nakahata | 2010-12-14 |
| 7737043 | Inspection method of compound semiconductor substrate, compound semiconductor substrate, surface treatment method of compound semiconductor substrate, and method of producing compound semiconductor crystal | So Tanaka, Yusuke Horie, Kyoko Okita, Takatoshi Okamoto | 2010-06-15 |
| 7713844 | Nitride semiconductor substrate, and method for working nitride semiconductor substrate | Yoshio Mezaki | 2010-05-11 |
| 7619301 | GaAs semiconductor substrate and fabrication method thereof | Yoshio Mezaki, Yusuke Horie, Yasuaki Higuchi | 2009-11-17 |
| 7569493 | Nitride-based compound semiconductor, method of cleaning a compound semiconductor, method of producing the same, and substrate | Akihiro Hachigo | 2009-08-04 |
| 7507668 | Polishing slurry, method of treating surface of GaxIn1-xAsyP1-y crystal and GaxIn1-xAsyP1-y crystal substrate | Keiji Ishibashi | 2009-03-24 |
| 7432186 | Method of surface treating substrates and method of manufacturing III-V compound semiconductors | Tomoki Uemura | 2008-10-07 |
| 7416604 | Nitride crystal, nitride crystal substrate, epilayer-containing nitride crystal substrate, semiconductor device and method of manufacturing the same | Keiji Ishibashi, Tokiko Kaji, Seiji Nakahata | 2008-08-26 |