Issued Patents All Time
Showing 1–21 of 21 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11549155 | Reduced iron production method and production apparatus | Koji Tokuda | 2023-01-10 |
| 11428468 | Rotary hearth furnace, and method for producing reduced iron using rotary hearth furnace | Sumito Hashimoto, Koji Tokuda | 2022-08-30 |
| 10571193 | Reduced iron production method and device | Taiji Hatakeyama, Shorin O | 2020-02-25 |
| 8915352 | Feeding system for reduced iron material | Osamu Tsuge | 2014-12-23 |
| 8845992 | III-nitride single-crystal ingot, III-nitride single-crystal substrate, method of manufacturing III-nitride single-crystal ingot, and method of manufacturing III-nitride single-crystal substrate | Takuji Okahisa, Seiji Nakahata | 2014-09-30 |
| 8698282 | Group III nitride semiconductor crystal substrate and semiconductor device | Takuji Okahisa, Tomohiro Kawase, Muneyuki Nishioka, Satoshi Arakawa | 2014-04-15 |
| 8294245 | GaN single-crystal mass and method of its manufacture, and semiconductor device and method of its manufacture | Hideaki Nakahata, Shinsuke Fujiwara, Takashi Sakurada, Yoshiyuki Yamamoto, Seiji Nakahata | 2012-10-23 |
| 8147612 | Method for manufacturing gallium nitride crystal and gallium nitride wafer | Takashi Sakurada, Shinsuke Fujiwara, Takuji Okahisa, Koji Uematsu, Hideaki Nakahata | 2012-04-03 |
| 7943964 | AlxGayIn1−x−yN crystal substrate, semiconductor device, and method of manufacturing the same | Shinsuke Fujiwara, Takuji Okahisa, Koji Uematsu, Manabu Okui, Muneyuki Nishioka +1 more | 2011-05-17 |
| 7432186 | Method of surface treating substrates and method of manufacturing III-V compound semiconductors | Takayuki Nishiura | 2008-10-07 |
| 7387989 | AlxGayInl−x−yN substrate, cleaning method of AlxGayInl−x−yN substrate, AlN substrate, and cleaning method of AlN substrate | Keiji Ishibashi, Shinsuke Fujiwara, Hideaki Nakahata | 2008-06-17 |
| 6805808 | Method for separating chips from diamond wafer | Satoshi Fujii, Noboru Gotou, Toshiaki Saka, Katsuhiro Itakura | 2004-10-19 |
| 6717009 | Method for making high-purity naphthalenedicarboxylic acid | Masahiro Motoyuki, Koji Yamamoto | 2004-04-06 |
| 6661152 | Diamond substrate for surface acoustic wave device, and surface acoustic wave device | Keiji Ishibashi, Takahiro Imai, Daichi Kawaguchi, Hideaki Nakahata, Satoshi Fujii | 2003-12-09 |
| 6525235 | Method for manufacturing 2,6-dimethylnaphthalene | Shingo Yoshida, Masahiro Motoyuki, Koji Yamamoto | 2003-02-25 |
| 6448688 | Hard carbon film and surface-acoustic-wave substrate | Satoshi Fujii, Yuichiro Seki, Hideaki Nakahata, Shinichi Shikata | 2002-09-10 |
| 6416865 | Hard carbon film and surface acoustic-wave substrate | Satoshi Fujii, Yuichiro Seki, Hideaki Nakahata, Shinichi Shikata | 2002-07-09 |
| 6356006 | Diamond wafer, method of estimating a diamond wafer and diamond surface acoustic wave device | Satoshi Fujii, Yuichiro Seki, Kentaro Yoshida, Hideaki Nakahata, Kenjiro Higaki +2 more | 2002-03-12 |
| 6320296 | Diamond wafer, method of estimating a diamond wafer and diamond surface acoustic wave device | Satoshi Fujii, Yuichiro Seki, Kentaro Yoshida, Hideaki Nakahata, Kenjiro Higaki +2 more | 2001-11-20 |
| 6210780 | Diamond wafer, method of estimating a diamond wafer and diamond surface acoustic wave device | Satoshi Fujii, Yuichiro Seki, Kentaro Yoshida, Hideaki Nakahata, Kenjiro Higaki +2 more | 2001-04-03 |
| 5959389 | Diamond-ZnO surface acoustic wave device | Hideaki Nakahata, Kenjiro Higaki, Satoshi Fujii, Hiroyuki Kitabayashi, Shin-ichi Shikata | 1999-09-28 |