Issued Patents All Time
Showing 1–17 of 17 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11891720 | Gallium arsenide single crystal substrate and method for producing gallium arsenide single crystal substrate | Koji Uematsu, Issei Satoh | 2024-02-06 |
| 11094537 | Group III nitride composite substrate and method for manufacturing the same, and method for manufacturing group III nitride semiconductor device | Keiji Ishibashi, Akihiro Hachigo, Yuki Hiromura, Naoki Matsumoto, Seiji Nakahata +6 more | 2021-08-17 |
| 10600676 | Group III nitride composite substrate and method for manufacturing the same, and method for manufacturing group III nitride semiconductor device | Keiji Ishibashi, Akihiro Hachigo, Yuki Hiromura, Naoki Matsumoto, Seiji Nakahata +6 more | 2020-03-24 |
| 9917004 | Group III nitride composite substrate and method for manufacturing the same, and method for manufacturing group III nitride semiconductor device | Keiji Ishibashi, Akihiro Hachigo, Yuki Hiromura, Naoki Matsumoto, Seiji Nakahata +6 more | 2018-03-13 |
| 9312340 | Group III nitride composite substrate and method for manufacturing the same, laminated group III nitride composite substrate, and group III nitride semiconductor device and method for manufacturing the same | Makoto Kiyama, Keiji Ishibashi, Akihiro Hachigo, Naoki Matsumoto | 2016-04-12 |
| 9136337 | Group III nitride composite substrate and method for manufacturing the same, laminated group III nitride composite substrate, and group III nitride semiconductor device and method for manufacturing the same | Keiji Ishibashi, Akihiro Hachigo, Yuki Hiromura, Naoki Matsumoto, Seiji Nakahata +2 more | 2015-09-15 |
| 8605769 | Semiconductor laser device and manufacturing method thereof | Susumu Yoshimoto, Hideki Matsubara, Hirohisa Saitou, Takashi Misaki, Hiroki Mori | 2013-12-10 |
| 8471264 | Method of manufacturing GaN substrate, method of manufacturing epitaxialwafer, method of manufacturing semiconductor device and epitaxialwafer | Yoshiki Miura | 2013-06-25 |
| 8391327 | Group III nitride semiconductor element and epitaxial wafer | Yusuke Yoshizumi, Yohei Enya, Masaki Ueno | 2013-03-05 |
| 8274088 | Surface-emitting laser element, fabrication method thereof, surface-emitting laser array, and fabrication method thereof | Hideki Matsubara, Hirohisa Saito, Shinji Matsukawa | 2012-09-25 |
| 8253162 | GaN substrate and light-emitting device | Shinsuke Fujiwara, Toshihiro Kotani, Seiji Nakahata, Koji Uematsu | 2012-08-28 |
| 8242498 | Compound semiconductor substrate, semiconductor device, and processes for producing them | Keiji Ishibashi | 2012-08-14 |
| 8173458 | Method for forming quantum well structure and method for manufacturing semiconductor light emitting element | Yohei Enya, Yusuke Yoshizumi, Masaki Ueno | 2012-05-08 |
| 8107507 | Group III nitride semiconductor element and epitaxial wafer | Yusuke Yoshizumi, Yohei Enya, Masaki Ueno | 2012-01-31 |
| 7932114 | Method of manufacturing GaN substrate, method of manufacturing epitaxialwafer, method of manufacturing semiconductor device and epitaxialwafer | Yoshiki Miura | 2011-04-26 |
| 7873088 | Group III nitride semiconductor element and epitaxial wafer | Yusuke Yoshizumi, Yohei Enya, Masaki Ueno | 2011-01-18 |
| 7863609 | Compound semiconductor substrate, semiconductor device, and processes for producing them | Keiji Ishibashi | 2011-01-04 |