Issued Patents All Time
Showing 26–50 of 73 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9105756 | Silicon carbide substrate, semiconductor device, and methods for manufacturing them | — | 2015-08-11 |
| 9093384 | Substrate, semiconductor device, and method of manufacturing the same | — | 2015-07-28 |
| 9070828 | III nitride semiconductor substrate, epitaxial substrate, and semiconductor device | — | 2015-06-30 |
| 9035429 | Group III nitride crystal substrate | Takayuki Nishiura | 2015-05-19 |
| 8975643 | Silicon carbide single-crystal substrate and method for manufacturing same | Kyoko Okita | 2015-03-10 |
| 8952494 | Group III nitride semiconductor substrate having a sulfide in a surface layer | — | 2015-02-10 |
| 8872189 | Substrate, semiconductor device, and method of manufacturing the same | — | 2014-10-28 |
| 8871647 | Group III nitride substrate, semiconductor device comprising the same, and method for producing surface-treated group III nitride substrate | — | 2014-10-28 |
| 8853670 | III nitride semiconductor substrate, epitaxial substrate, and semiconductor device | — | 2014-10-07 |
| 8841215 | Polishing agent, compound semiconductor manufacturing method, and semiconductor device manufacturing method | Masashi Futamura, Takayuki Nishiura | 2014-09-23 |
| 8828140 | Nitride crystal, nitride crystal substrate, epilayer-containing nitride crystal substrate, semiconductor device and method of manufacturing the same | Tokiko Kaji, Seiji Nakahata, Takayuki Nishiura | 2014-09-09 |
| 8771552 | Group III nitride crystal substrate, epilayer-containing group III nitride crystal substrate, semiconductor device and method of manufacturing the same | Yusuke Yoshizumi | 2014-07-08 |
| 8586998 | Silicon carbide substrate manufacturing method and silicon carbide substrate | Hiroki Inoue, Shinsuke Fujiwara | 2013-11-19 |
| 8471364 | Group III nitride substrate, semiconductor device comprising the same, and method for producing surface-treated group III nitride substrate | — | 2013-06-25 |
| 8338299 | Method of processing a surface of group III nitride crystal and group III nitride crystal substrate | Takayuki Nishiura | 2012-12-25 |
| 8283694 | GaN substrate, epitaxial layer-provided substrate, methods of manufacturing the same, and method of manufacturing semiconductor device | Akihiro Hachigo, Masato Irikura, Seiji Nakahata | 2012-10-09 |
| 8242498 | Compound semiconductor substrate, semiconductor device, and processes for producing them | Fumitake Nakanishi | 2012-08-14 |
| 8228963 | Gallium nitride-based semiconductor optical device, method of fabricating gallium nitride-based semiconductor optical device, and epitaxial wafer | Yohei Enya, Yusuke Yoshizumi, Hideki Osada, Katsushi Akita, Masaki Ueno | 2012-07-24 |
| 8192543 | Nitride crystal, nitride crystal substrate, epilayer-containing nitride crystal substrate, semiconductor device and method of manufacturing the same | Tokiko Kaji, Seiji Nakahata, Takayuki Nishiura | 2012-06-05 |
| 8183669 | Nitride semiconductor wafer having a chamfered edge | Hidenori Mikami, Naoki Matsumoto | 2012-05-22 |
| 8115927 | Production method of compound semiconductor member | Akihiro Hachigo, Takayuki Nishiura | 2012-02-14 |
| 8101968 | Group III nitride substrate, epitaxial layer-provided substrate, methods of manufacturing the same, and method of manufacturing semiconductor device | Akihiro Hachigo, Masato Irikura, Seiji Nakahata | 2012-01-24 |
| 8101523 | Method of processing of nitride semiconductor wafer, nitride semiconductor wafer, method of producing nitride semiconductor device and nitride semiconductor device | Hidenori Mikami, Naoki Matsumoto | 2012-01-24 |
| 8030681 | Group III nitride substrate, semiconductor device comprising the same, and method for producing surface-treated group III nitride substrate | — | 2011-10-04 |
| 7981216 | Vacuum processing apparatus | Masahiko Tanaka, Akira Kumagai, Manabu Ikemoto, Katsuhisa Yuda | 2011-07-19 |