Issued Patents All Time
Showing 25 most recent of 59 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11242618 | Silicon carbide substrate and method of manufacturing the same | Shinsuke Fujiwara, Taro Nishiguchi | 2022-02-08 |
| 11066756 | Crystal growth apparatus, method for manufacturing silicon carbide single crystal, silicon carbide single crystal substrate, and silicon carbide epitaxial substrate | Tsutomu Hori, Sho SASAKI, Tetsuya Kishida | 2021-07-20 |
| 10741683 | Semiconductor device and method for manufacturing same | Makoto Sasaki, Taro Nishiguchi, Kyoko Okita, Keiji Wada, Tomihito Miyazaki | 2020-08-11 |
| 10724151 | Device of manufacturing silicon carbide single crystal | Tsutomu Hori | 2020-07-28 |
| 10513799 | Method for manufacturing silicon carbide single crystal | Sho SASAKI, Tsutomu Hori | 2019-12-24 |
| 10494735 | Crystal growth apparatus, method for manufacturing silicon carbide single crystal, silicon carbide single crystal substrate, and silicon carbide epitaxial substrate | Tsutomu Hori, Sho SASAKI, Tetsuya Kishida | 2019-12-03 |
| 10361273 | Silicon carbide substrate | Naoki KAJI, Shunsaku UETA, Tsutomu Hori | 2019-07-23 |
| 10319821 | Silicon carbide substrate | Shunsaku UETA, Kyoko Okita | 2019-06-11 |
| 10246797 | Method for manufacturing silicon carbide single crystal | Sho SASAKI, Tsutomu Hori | 2019-04-02 |
| 9947782 | Semiconductor device and method for manufacturing same | Makoto Sasaki, Taro Nishiguchi, Kyoko Okita, Keiji Wada, Tomihito Miyazaki | 2018-04-17 |
| 9856583 | Method of manufacturing silicon carbide single crystal | Tsutomu Hori | 2018-01-02 |
| 9845549 | Method of manufacturing silicon carbide single crystal | Tsutomu Hori | 2017-12-19 |
| 9583571 | Dislocation in SiC semiconductor substrate | Taro Nishiguchi, Shinsuke Fujiwara | 2017-02-28 |
| 9450054 | Dislocation in SiC semiconductor substrate | Taro Nishiguchi, Shinsuke Fujiwara | 2016-09-20 |
| 9255344 | Silicon carbide substrate and method of manufacturing the same | Shinsuke Fujiwara, Taro Nishiguchi | 2016-02-09 |
| 9090992 | Method of manufacturing single crystal | Taro Nishiguchi, Makoto Sasaki | 2015-07-28 |
| 9082621 | Method for manufacturing silicon carbide single crystal, and silicon carbide substrate | Taro Nishiguchi, Makoto Sasaki | 2015-07-14 |
| 8969103 | Method for manufacturing silicon carbide substrate and method for manufacturing semiconductor device | Makoto Sasaki, Satomi Itoh, Kyoko Okita | 2015-03-03 |
| 8912550 | Dislocations in SiC semiconductor substrate | Taro Nishiguchi, Shinsuke Fujiwara | 2014-12-16 |
| 8872188 | Silicon carbide semiconductor device and method of manufacturing thereof | Misako Honaga | 2014-10-28 |
| 8803294 | Semiconductor device and method for manufacturing same | Takeyoshi Masuda, Keiji Wada, Toru Hiyoshi | 2014-08-12 |
| 8709950 | Silicon carbide substrate, epitaxial wafer and manufacturing method of silicon carbide substrate | Makoto Sasaki | 2014-04-29 |
| 8697555 | Method of producing semiconductor device and semiconductor device | Kazuhiro Fujikawa, Yasuo Namikawa, Takeyoshi Masuda | 2014-04-15 |
| 8686434 | Silicon carbide semiconductor device and method for manufacturing the same | Takeyoshi Masuda, Keiji Wada, Masato Tsumori | 2014-04-01 |
| 8664205 | Oil-in-water emulsion lotion containing 22-oxa-1α, 25-dihydroxyvitamin D3 and method of treatment of skin disorder using the same | — | 2014-03-04 |