TN

Taro Nishiguchi

Sumitomo Electric Industries: 36 patents #330 of 21,551Top 2%
Overall (All Time): #92,787 of 4,157,543Top 3%
36
Patents All Time

Issued Patents All Time

Showing 1–25 of 36 patents

Patent #TitleCo-InventorsDate
12428752 Silicon carbide epitaxial substrate Hiroki NISHIHARA, Takaya MIYASE 2025-09-30
11984480 Silicon carbide epitaxial substrate Taro ENOKIZONO, Tsutomu Hori 2024-05-14
11530491 Silicon carbide epitaxial substrate and method for manufacturing silicon carbide semiconductor device Keiji Wada, Tsutomu Hori 2022-12-20
11242618 Silicon carbide substrate and method of manufacturing the same Shin Harada, Shinsuke Fujiwara 2022-02-08
11053607 Silicon carbide epitaxial substrate and method for manufacturing silicon carbide semiconductor device Keiji Wada, Tsutomu Hori 2021-07-06
11004941 Silicon carbide epitaxial substrate having grooves extending along main surface and method of manufacturing silicon carbide semiconductor device Keiji Wada, Hironori Itoh 2021-05-11
10770550 Silicon carbide epitaxial substrate having grooves extending along main surface and method of manufacturing silicon carbide semiconductor device Keiji Wada, Hironori Itoh 2020-09-08
10741683 Semiconductor device and method for manufacturing same Shin Harada, Makoto Sasaki, Kyoko Okita, Keiji Wada, Tomihito Miyazaki 2020-08-11
10734222 Semiconductor stack Yu Saitoh, Hirofumi Yamamoto 2020-08-04
10612160 Epitaxial wafer and method for manufacturing same Jun Genba, Hironori Itoh, Tomoaki Hatayama, Hideyuki Doi 2020-04-07
10580647 Semiconductor stack Yu Saitoh, Hirofumi Yamamoto 2020-03-03
10490634 Silicon carbide epitaxial substrate having a silicon carbide layer and method of manufacturing silicon carbide semiconductor device Keiji Wada, Hironori Itoh 2019-11-26
10395924 Semiconductor stack Yu Saitoh, Hirofumi Yamamoto 2019-08-27
10396163 Silicon carbide epitaxial substrate and method for manufacturing silicon carbide semiconductor device Keiji Wada, Hironori Itoh, Takemi Terao, Kenji Kanbara 2019-08-27
10229836 Method for manufacturing silicon carbide epitaxial substrate, silicon carbide epitaxial substrate, method for manufacturing silicon carbide semiconductor device, and silicon carbide semiconductor device Keiji Wada, Toru Hiyoshi 2019-03-12
9966249 Silicon carbide semiconductor substrate and method for manufacturing same So Tanaka, Kyoko Okita, Ryosuke Kubota, Kenji Kanbara 2018-05-08
9957641 Epitaxial wafer and method for manufacturing same Jun Genba, Hironori Itoh, Tomoaki Hatayama, Hideyuki Doi 2018-05-01
9947782 Semiconductor device and method for manufacturing same Shin Harada, Makoto Sasaki, Kyoko Okita, Keiji Wada, Tomihito Miyazaki 2018-04-17
9777404 Method for manufacturing silicon carbide epitaxial substrate, and silicon carbide epitaxial substrate Keiji Wada, Jun Genba 2017-10-03
9728628 Silicon carbide semiconductor device and method for manufacturing same Keiji Wada, Toru Hiyoshi, Taku Horii, Kosuke Uchida 2017-08-08
9631296 Method of manufacturing silicon carbide substrate Shinsuke Fujiwara, Tsutomu Hori, Naoki Ooi, Shunsaku UETA 2017-04-25
9583571 Dislocation in SiC semiconductor substrate Shin Harada, Shinsuke Fujiwara 2017-02-28
9450054 Dislocation in SiC semiconductor substrate Shin Harada, Shinsuke Fujiwara 2016-09-20
9255344 Silicon carbide substrate and method of manufacturing the same Shin Harada, Shinsuke Fujiwara 2016-02-09
9090992 Method of manufacturing single crystal Makoto Sasaki, Shin Harada 2015-07-28