HI

Hironori Itoh

Sumitomo Electric Industries: 13 patents #1,957 of 21,551Top 10%
JA Japan Science And Technology Agency: 1 patents #756 of 2,171Top 35%
KT Kabushiki Kaisha Toshiba: 1 patents #13,537 of 21,451Top 65%
📍 Itami, JP: #205 of 1,436 inventorsTop 15%
Overall (All Time): #312,591 of 4,157,543Top 8%
15
Patents All Time

Issued Patents All Time

Showing 1–15 of 15 patents

Patent #TitleCo-InventorsDate
12014924 Silicon carbide epitaxial substrate and method for manufacturing silicon carbide semiconductor device Kenji Kanbara, Tsutomu Hori 2024-06-18
11373868 Method for manufacturing silicon carbide epitaxial substrate 2022-06-28
11004941 Silicon carbide epitaxial substrate having grooves extending along main surface and method of manufacturing silicon carbide semiconductor device Keiji Wada, Taro Nishiguchi 2021-05-11
10865501 Silicon carbide epitaxial substrate and method of manufacturing silicon carbide semiconductor device Tsutomu Hori 2020-12-15
10825903 Silicon carbide epitaxial substrate and method for manufacturing silicon carbide semiconductor device Keiji Wada, Tsutomu Hori 2020-11-03
10811500 Silicon carbide epitaxial substrate and method for manufacturing silicon carbide semiconductor device Keiji Wada, Tsutomu Hori 2020-10-20
10770550 Silicon carbide epitaxial substrate having grooves extending along main surface and method of manufacturing silicon carbide semiconductor device Keiji Wada, Taro Nishiguchi 2020-09-08
10697086 Method for manufacturing silicon carbide epitaxial substrate, method for manufacturing silicon carbide semiconductor device, and apparatus for manufacturing silicon carbide epitaxial substrate Keiji Wada, Hideyuki Doi 2020-06-30
10612160 Epitaxial wafer and method for manufacturing same Taro Nishiguchi, Jun Genba, Tomoaki Hatayama, Hideyuki Doi 2020-04-07
10490634 Silicon carbide epitaxial substrate having a silicon carbide layer and method of manufacturing silicon carbide semiconductor device Keiji Wada, Taro Nishiguchi 2019-11-26
10396163 Silicon carbide epitaxial substrate and method for manufacturing silicon carbide semiconductor device Keiji Wada, Takemi Terao, Kenji Kanbara, Taro Nishiguchi 2019-08-27
10121865 Silicon carbide epitaxial substrate and method of manufacturing silicon carbide semiconductor device Tsutomu Hori 2018-11-06
9957641 Epitaxial wafer and method for manufacturing same Taro Nishiguchi, Jun Genba, Tomoaki Hatayama, Hideyuki Doi 2018-05-01
7732015 Process for producing nanoparticle or nanostructure with use of nanoporous material Shintaro Nomura 2010-06-08
5731952 Portable electronic apparatus having the heat radiation device for circuit module Keizo Ohgami, Kazuya Shibasaki 1998-03-24