Issued Patents All Time
Showing 26–50 of 61 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8574364 | GaN-crystal free-standing substrate and method for producing the same | Koji Uematsu, Hitoshi Kasai, Takuji Okahisa | 2013-11-05 |
| 8546166 | III nitride crystal substrate, and light-emitting device and method of its manufacture | Hiroaki Yoshida | 2013-10-01 |
| 8540817 | Method of manufacturing a Si(1-v-w-x)CwAlxNv substrate, method of manufacturing an epitaxial wafer, Si(1-v-w-x)CwAlxNv substrate, and epitaxial wafer | Issei Satoh, Michimasa Miyanaga, Hideaki Nakahata | 2013-09-24 |
| 8524575 | Group III nitride crystal and method for producing the same | Koji Uematsu, Hideki Osada, Seiji Nakahata | 2013-09-03 |
| 8501592 | Freestanding III-nitride single-crystal substrate and method of manufacturing semiconductor device utilizing the substrate | Seiji Nakahata | 2013-08-06 |
| 8476086 | Semiconductor device and method of its manufacture | Takashi Sakurada, Makoto Kiyama, Yusuke Yoshizumi | 2013-07-02 |
| 8470090 | AlN crystal and method for growing the same, and AlN crystal substrate | Naho Mizuhara, Michimasa Miyanaga, Tomohiro Kawase | 2013-06-25 |
| 8435866 | Method for manufacturing silicon carbide substrate | Taro Nishiguchi, Makoto Sasaki, Shin Harada, Kyoko Okita, Hiroki Inoue +1 more | 2013-05-07 |
| 8415180 | Method for fabricating wafer product and method for fabricating gallium nitride based semiconductor optical device | Shin Hashimoto, Katsushi Akita, Kensaku Motoki, Hideaki Nakahata | 2013-04-09 |
| 8377204 | Group III nitride single crystal and method of its growth | Michimasa Miyanaga, Naho Mizuhara, Seiji Nakahata, Hideaki Nakahata | 2013-02-19 |
| 8361226 | III-nitride single-crystal growth method | Michimasa Miyanaga, Naho Mizuhara, Hideaki Nakahata, Tomohiro Kawase | 2013-01-29 |
| 8357597 | Process for producing Si(1-v-w-x)CwAlxNv base material, process for producing epitaxial wafer, Si(1-v-w-x)CwAlxNv base material, and epitaxial wafer | Issei Satoh, Michimasa Miyanaga, Hideaki Nakahata | 2013-01-22 |
| 8294245 | GaN single-crystal mass and method of its manufacture, and semiconductor device and method of its manufacture | Hideaki Nakahata, Takashi Sakurada, Yoshiyuki Yamamoto, Seiji Nakahata, Tomoki Uemura | 2012-10-23 |
| 8253162 | GaN substrate and light-emitting device | Toshihiro Kotani, Fumitake Nakanishi, Seiji Nakahata, Koji Uematsu | 2012-08-28 |
| 8168515 | Method for manufacturing semiconductor substrate | Makoto Sasaki, Shin Harada, Taro Nishiguchi, Yasuo Namikawa | 2012-05-01 |
| 8147612 | Method for manufacturing gallium nitride crystal and gallium nitride wafer | Tomoki Uemura, Takashi Sakurada, Takuji Okahisa, Koji Uematsu, Hideaki Nakahata | 2012-04-03 |
| D655256 | Semiconductor substrate | Taro Nishiguchi, Makoto Sasaki, Shin Harada, Yasuo Namikawa | 2012-03-06 |
| D651991 | Semiconductor substrate | Taro Nishiguchi, Makoto Sasaki, Shin Harada, Yasuo Namikawa | 2012-01-10 |
| D651992 | Semiconductor substrate | Taro Nishiguchi, Makoto Sasaki, Shin Harada, Yasuo Namikawa | 2012-01-10 |
| 7998836 | Method for fabricating gallium nitride based semiconductor electronic device | Hiromu Shiomi, Yu Saitoh, Makoto Kiyama | 2011-08-16 |
| 7964477 | Method of manufacturing III nitride crystal, III nitride crystal substrate, and semiconductor device | — | 2011-06-21 |
| 7943964 | AlxGayIn1−x−yN crystal substrate, semiconductor device, and method of manufacturing the same | Tomoki Uemura, Takuji Okahisa, Koji Uematsu, Manabu Okui, Muneyuki Nishioka +1 more | 2011-05-17 |
| 7892513 | Group III nitride crystal and method of its growth | Hiroaki Yoshida, Ryu Hirota, Koji Uematsu, Haruko Tanaka | 2011-02-22 |
| 7387989 | AlxGayInl−x−yN substrate, cleaning method of AlxGayInl−x−yN substrate, AlN substrate, and cleaning method of AlN substrate | Tomoki Uemura, Keiji Ishibashi, Hideaki Nakahata | 2008-06-17 |
| 7232555 | AIGaInN single-crystal wafer | — | 2007-06-19 |