Issued Patents All Time
Showing 26–50 of 94 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8421190 | Group III nitride semiconductor substrate and manufacturing method thereof | Takuji Okahisa, Hideaki Nakahata | 2013-04-16 |
| 8404569 | Fabrication method and fabrication apparatus of group III nitride crystal substance | Hitoshi Kasai, Takuji Okahisa, Shunsuke Fujita, Naoki Matsumoto, Hideyuki Ijiri +4 more | 2013-03-26 |
| 8404042 | Group-III nitride crystal composite | Naho Mizuhara, Koji Uematsu, Michimasa Miyanaga, Keisuke Tanizaki, Hideaki Nakahata +1 more | 2013-03-26 |
| 8377204 | Group III nitride single crystal and method of its growth | Michimasa Miyanaga, Naho Mizuhara, Shinsuke Fujiwara, Hideaki Nakahata | 2013-02-19 |
| 8362521 | III nitride semiconductor crystal, III nitride semiconductor device, and light emitting device | Hideaki Nakahata, Koji Uematsu, Makoto Kiyama, Youichi Nagai, Takao Nakamura | 2013-01-29 |
| 8349078 | Method of forming nitride semiconductor epitaxial layer and method of manufacturing nitride semiconductor device | Hiromu Shiomi, Yu Saitoh, Kazuhide Sumiyoshi, Akihiro Hachigo, Makoto Kiyama | 2013-01-08 |
| 8304334 | III-V compound crystal and semiconductor electronic circuit element | Koji Uematsu, Ryu Hirota | 2012-11-06 |
| 8294245 | GaN single-crystal mass and method of its manufacture, and semiconductor device and method of its manufacture | Hideaki Nakahata, Shinsuke Fujiwara, Takashi Sakurada, Yoshiyuki Yamamoto, Tomoki Uemura | 2012-10-23 |
| 8283694 | GaN substrate, epitaxial layer-provided substrate, methods of manufacturing the same, and method of manufacturing semiconductor device | Keiji Ishibashi, Akihiro Hachigo, Masato Irikura | 2012-10-09 |
| 8258051 | Method of manufacturing III-nitride crystal, and semiconductor device utilizing the crystal | Naho Mizuhara, Koji Uematsu, Michimasa Miyanaga, Keisuke Tanizaki, Hideaki Nakahata +1 more | 2012-09-04 |
| 8253162 | GaN substrate and light-emitting device | Shinsuke Fujiwara, Toshihiro Kotani, Fumitake Nakanishi, Koji Uematsu | 2012-08-28 |
| 8227826 | Method of storing GaN substrate, stored substrate, and semiconductor device and method of its manufacture | Hideyuki Ijiri | 2012-07-24 |
| 8198177 | AlxInyGal-x-yN mixture crystal substrate, method of growing same and method of producing same | Ryu Hirota, Kensaku Motoki, Takuji Okahisa, Kouji Uematsu | 2012-06-12 |
| 8192543 | Nitride crystal, nitride crystal substrate, epilayer-containing nitride crystal substrate, semiconductor device and method of manufacturing the same | Keiji Ishibashi, Tokiko Kaji, Takayuki Nishiura | 2012-06-05 |
| 8134223 | III-V compound crystal and semiconductor electronic circuit element | Koji Uematsu, Ryu Hirota | 2012-03-13 |
| 8110484 | Conductive nitride semiconductor substrate and method for producing the same | Fumitaka Sato, Makoto Kiyama | 2012-02-07 |
| 8101968 | Group III nitride substrate, epitaxial layer-provided substrate, methods of manufacturing the same, and method of manufacturing semiconductor device | Keiji Ishibashi, Akihiro Hachigo, Masato Irikura | 2012-01-24 |
| 8067300 | AlxInyGa1-x-yN mixture crystal substrate, method of growing same and method of producing same | Ryu Hirota, Kensaku Motoki, Takuji Okahisa, Kouji Uematsu | 2011-11-29 |
| 8038794 | Group III-nitride crystal, manufacturing method thereof, group III-nitride crystal substrate and semiconductor device | Takatomo Sasaki, Yusuke Mori, Masashi Yoshimura, Fumio Kawamura, Ryu Hirota | 2011-10-18 |
| 8008173 | III nitride single crystal and method of manufacturing semiconductor device incorporating the III nitride single crystal | — | 2011-08-30 |
| 8002892 | Group III nitride crystal substrate, method of its manufacture, and group III nitride semiconductor device | Ryu Hirota, Masaki Ueno | 2011-08-23 |
| 7915149 | Gallium nitride substrate and gallium nitride layer formation method | Fumitaka Sato, Yoshiki Miura, Akinori Koukitu, Yoshinao Kumagai | 2011-03-29 |
| 7905958 | Group III-nitride semiconductor crystal and manufacturing method thereof, and group III-nitride semiconductor device | Takatomo Sasaki, Yusuke Mori, Masashi Yoshimura, Fumio Kawamura, Ryu Hirota | 2011-03-15 |
| 7901960 | Group III nitride substrate, epitaxial layer-provided substrate, methods of manufacturing the same, and method of manufacturing semiconductor device | Keiji Ishibashi, Akihiro Hachigo, Masato Irikura | 2011-03-08 |
| 7863167 | Method of manufacturing group III nitride crystal | Fumitaka Sato | 2011-01-04 |